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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Sayginer, M. Yazgi, M. Toker, A. Kuntman, H. Virdee, B.S. |
| Copyright Year | 2011 |
| Description | Author affiliation: Istanbul Technical University, Department of Electronics and Communication Engineering, 34469, Maslak, Turkey (Sayginer, M.; Yazgi, M.; Toker, A.; Kuntman, H.) || London Metropolitan University, Faculty of Computing, Centre for Communications Technology, 166-220 Holloway Road, N7 8DB, U.K. (Virdee, B.S.) |
| Abstract | This paper presents two integrated class-A travelling wave medium power amplifiers employing 0.35µm SiGe HBT process. The first amplifier realized is a $1.3×1mm^{2}$ device comprising of a single-stage configuration using a single transistor that exhibits an average small-signal gain of 7dB and power level of 14dBm between 0.25 to 2.5GHz while maintaining power-added efficiency in the range 30% to 10%. The second amplifier is $1.8×2.3mm^{2}$ device comprising of a driver stage cascaded with two identical amplifier stages in a parallel configuration whose outputs are combined together to enhance the devices output power by 3dB across the wideband frequency range. This amplifier's unique topology is implemented using a version of the first amplifier. The amplifier's measured output power was approximately 18dBm, the average small-signal gain was 21dB, and efficiency between 30% to 10% across 0.2–2.2GHz. |
| Starting Page | 821 |
| Ending Page | 824 |
| File Size | 469469 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781457706172 |
| e-ISBN | 9781457706189 |
| e-ISBN | 9781457706165 |
| DOI | 10.1109/ECCTD.2011.6043833 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-08-29 |
| Publisher Place | Sweden |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Power measurement Power amplifiers Bandwidth SiGe HBT Wideband Power Amplifiers Frequency measurement Transistors Power generation Silicon germanium |
| Content Type | Text |
| Resource Type | Article |
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