NDLI: A high performance DC-20 GHz SPDT switch in a low cost plastic QFN package

Content Provider	IEEE Xplore Digital Library
Author	Qun Xiao Samiotes, G. Galluccio, T. Rizzi, B.
Copyright Year	2009
Description	Author affiliation: M/A-COM TECHNOLOGY SOLUTIONS, INC., LOWELL, MA, 01851, U.S.A. (Qun Xiao; Samiotes, G.; Galluccio, T.; Rizzi, B.)
Abstract	This paper reviews the design and measurements of a DC-20 GHz GaAs SPDT (single-pole-double-throw) switch with state-of-the art insertion loss, isolation and power handling in a low cost plastic QFN (Quad Flatpack Non-lead) package. To reduce the performance degradation introduced by the plastic QFN package, 3D EM (electromagnetic) modelling was used to characterize the interconnection between the MMIC die and the package. The packaged switch yields 1.7 dB maximum insertion loss and 40 dB minimum isolation from DC to 20 GHz. The comparison between this result and the data measured from the MMIC bare die shows no significant performance deterioration caused by the package. The switch utilizes M/A-COM's 0.5 µm pHEMT (Pseudomorphic High Electron Mobility Transistor) process which is based on an AlGaAs/InGaAs/GaAs material system.
Starting Page	320
Ending Page	323
File Size	441538
Page Count	4
File Format	PDF
ISBN	9781424447497
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-09-28
Publisher Place	Italy
Access Restriction	Subscribed
Rights Holder	EuMA
Subject Keyword	Costs Electromagnetic measurements Power measurement Gallium arsenide PHEMTs Switches Insertion loss MMICs Loss measurement Plastic packaging
Content Type	Text
Resource Type	Article

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