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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Demirel, N. Kerherve, E. Plana, R. Pache, D. Belot, D. |
| Copyright Year | 2009 |
| Description | Author affiliation: STMicroelectronics, R&D, 38920 Crolles, France (Demirel, N.; Pache, D.; Belot, D.) || LAAS, University of Toulouse, 31077, France (Plana, R.) || IMS, University of Bordeaux, 33405 Talence, France (Kerherve, E.) |
| Abstract | This paper presents the performance of a wideband 0.13µm BiCMOS SiGe power amplifier (PA) for millimeter wave (mmW) applications. The design and the measured results of a monolithic integrated low-voltage PA are reported. A balanced four-stage common emitter circuit topology was used to achieve greater than 17dB of power gain from 59 GHz to 71GHz. As a result, the amplifier delivers 18dBm of maximum RF output power and 14.5dBm output power at 1dB compression. The circuit shows 7.8% of power added efficiency (PAE) from a 1.8V supply voltage at 65 GHz. The power amplifier was fully integrated including matching elements and bias circuit. The matching networks use coplanar waveguide (CPW) lines and MIM capacitors for high integration purpose. |
| Starting Page | 499 |
| Ending Page | 502 |
| File Size | 306286 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424447497 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-09-28 |
| Publisher Place | Italy |
| Access Restriction | Subscribed |
| Rights Holder | EuMA |
| Subject Keyword | Broadband amplifiers Germanium silicon alloys Millimeter wave technology Circuits Power amplifiers MMICs Radiofrequency amplifiers Coplanar waveguides Power generation Silicon germanium |
| Content Type | Text |
| Resource Type | Article |
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