NDLI: Analysis of Fin width and temperature dependence of flicker noise for bulk-FinFET

Content Provider	IEEE Xplore Digital Library
Author	Ohguro, T. Okano, K. Izumida, T. Inaba, S. Momo, N. Kokubun, K. Momose, H.S. Toyoshima, Y.
Copyright Year	2009
Description	Author affiliation: Center for Semiconductor R&D, Semiconductor Company, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama, Japan (Ohguro, T.; Okano, K.; Izumida, T.; Inaba, S.; Momo, N.; Kokubun, K.; Momose, H.S.; Toyoshima, Y.)
Abstract	In this paper, detailed analysis of Fin width and temperature dependence of flicker noise for bulk-FinFET are described. The FinFET with narrow fin width such as below 30 nm is attractive for scaled CMOS because of double gate structure. Additionally, the flicker noise of FinFET decreases and the temperature dependence of the noise become smaller as the fin width becomes narrower. According to our measurements and simulation analysis, these are because the vertical electrical field from channel to gate electrode has relaxed with narrowing of fin width. The FinFET with narrow fin width is attractive for not only digital but also RF / analog circuits design because of good cut-off characteristics and lower flicker noise.
Starting Page	61
Ending Page	64
File Size	130799
Page Count	4
File Format	PDF
ISBN	9781424447497
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-09-28
Publisher Place	Italy
Access Restriction	Subscribed
Rights Holder	EuMA
Subject Keyword	Radio frequency Electrodes Temperature dependence Analytical models Annealing Dry etching Hydrogen Analog circuits FinFETs 1f noise
Content Type	Text
Resource Type	Article

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