NDLI: Wideband distributed amplifiers in a hybrid microstrip-environment using 0.1 µm (Al,Ga)N/GaN HEMTs grown on Silicon

Content Provider	IEEE Xplore Digital Library
Author	Marti, D. Alt, A.R. Haifeng Sun Grubinger, H. Benedickter, H. Bolognesi, C.R.
Copyright Year	2009
Description	Author affiliation: THz Electronics Group, IFH, ETH-Zürich, Gloriastrasse 35, 8092, Switzerland (Marti, D.; Alt, A.R.; Haifeng Sun; Grubinger, H.; Benedickter, H.; Bolognesi, C.R.)
Abstract	Two hybrid broadband distributed amplifiers were designed and fabricated in microstrip using deep-submicron AlGaN/GaN HEMTs grown on Silicon. One design is optimized for high gain and achieves a measured S21 of 10 dB in the band of 0–17 GHz. The second is optimized for bandwidth and yields a measured S21 of 8 dB in the band of 0–22 GHz. To the best of our knowledge, such performances are unprecedented in GaN hybrid distributed amplifiers implemented in a hybrid microstrip environment. Both amplifiers consist of four transistors with 0.1 µm gate footprints and 1 µm source-drain spacing, and exhibit 1 dB compression output power levels of 20 dBm, third order intercept points ≫31 dBm and power added efficiencies of ∼12 %. The hybrid/microstrip architecture imposes constraints associated with dimensional/impedance control tolerances and parasitic bond wire inductances but careful characterization of bond wires in the design process enable amplifier performances rivaling those of certain MMICs in the same frequency bands.
Starting Page	93
Ending Page	96
File Size	856693
Page Count	4
File Format	PDF
ISBN	9781424447497
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-09-28
Publisher Place	Italy
Access Restriction	Subscribed
Rights Holder	EuMA
Subject Keyword	Distributed amplifiers Power amplifiers HEMTs Silicon Microstrip Gallium nitride MODFETs Bonding Aluminum gallium nitride Design optimization
Content Type	Text
Resource Type	Article

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