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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Ying-Ta Chiu Yu-Hsiu Shao Yi-Shao Lai |
| Copyright Year | 2008 |
| Description | Author affiliation: Central Labs., Adv. Semicond. Eng., Inc., Kaohsiung (Ying-Ta Chiu; Yu-Hsiu Shao; Yi-Shao Lai) |
| Abstract | Electromigration and thermomigration in the flip chip package are apparent in the reliability test. The 99.3Sn-0.7Cu/96.5Sn-3Ag-0.5Cu composite flip-chip solder joints with Ti/Ni(V)/Cu under bump metallurgy and different surface finishes are investigated when applied current density of 10 $kA/cm^{2}$ and 15 $kA/cm^{2}$ at 150degC and 125degC, respectively. Experimental results show the solder migrates to the Al trace in the chip when the solder joint was subjected to a test condition of 15 $kA/cm^{2}$ at 125degC. This is because the combined effect from electromigration and thermomigration causes trace peeling in the flip chip package at a high current density over 15 $kA/cm^{2}.$ It is also revealed that the mean time to failure of the solder joint with Au/Ni/Cu pad surface finish under 10 $kA/cm^{2}$ at 150degC is 1141 h longer than the one with Cu pad finish. The dendrite of Cu-Sn compound under 15 $kA/cm^{2}$ at 125degC is different from that under 10 $kA/cm^{2}$ at 150degC. |
| Starting Page | 49 |
| Ending Page | 52 |
| File Size | 3957018 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424436231 |
| DOI | 10.1109/IMPACT.2008.4783805 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-10-22 |
| Publisher Place | Taiwan |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Electromigration Gold Flip chip solder joints Metallization Failure analysis Packaging Flip chip Surface finishing Current density Testing |
| Content Type | Text |
| Resource Type | Article |
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