NDLI: Electromigration Reliability and Morphologies of Cu Pillar Flip-Chip Solder Joints with Cu Substrate Pad Metallization

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Electromigration Reliability and Morphologies of Cu Pillar Flip-Chip Solder Joints with Cu Substrate Pad Metallization

Content Provider	Semantic Scholar
Author	Lai, Yi-Shao Chiu, Ying-Ta Chen, J. L.
Copyright Year	2008
Abstract	The Cu pillar is a thick underbump metallurgy (UBM) structure developed to alleviate current crowding in a flip-chip solder joint under operating conditions. We present in this work an examination of the electromigration reliability and morphologies of Cu pillar flip-chip solder joints formed by joining Ti/Cu/Ni UBM with largely elongated ∼62 μm Cu onto Cu substrate pad metallization using the Sn-3Ag-0.5Cu solder alloy. Three test conditions that controlled average current densities in solder joints and ambient temperatures were considered: 10 kA/cm2 at 150°C, 10 kA/cm2 at 160°C, and 15 kA/cm2 at 125°C. Electromigration reliability of this particular solder joint turns out to be greatly enhanced compared to a conventional solder joint with a thin-film-stack UBM. Cross-sectional examinations of solder joints upon failure indicate that cracks formed in (Cu,Ni)6Sn5 or Cu6Sn5 intermetallic compounds (IMCs) near the cathode side of the solder joint. Moreover, the ~52-μm-thick Sn-Ag-Cu solder after long-term current stressing has turned into a combination of ~80% Cu-Ni-Sn IMC and ~20% Sn-rich phases, which appeared in the form of large aggregates that in general were distributed on the cathode side of the solder joint.
Starting Page	1624
Ending Page	1630
Page Count	7
File Format	PDF HTM / HTML
DOI	10.1007/s11664-008-0515-3
Alternate Webpage(s)	https://page-one.springer.com/pdf/preview/10.1007/s11664-008-0515-3
Alternate Webpage(s)	https://doi.org/10.1007/s11664-008-0515-3
Volume Number	37
Journal	2008 58th Electronic Components and Technology Conference
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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