NDLI: Low temperature MOCVD growth of V/VI materials via a $Me_{3}SiNMe

Content Provider	IEEE Xplore Digital Library
Author	Groshens, T.J. Gedridge Jr., R.W. Scheri, R. Cole, T.
Copyright Year	1996
Description	Author affiliation: Res. & Technol. Div., Naval Air Warfare Center Weapons Div., China Lake, CA, USA (Groshens, T.J.)
Abstract	The reactive precursors M(NMe/sub 2/)/sub 3/ (M=Sb, Bi) and (Me/sub 1/Si)/sub 2/Te were used to deposit films of M/sub 2/Te/sub 3/ (M=Sb, Bi) on Si(111) cut 4/spl deg/ off-axis, GaAs(100), and Kapton substrates between 25/spl deg/C and 150/spl deg/C in a low pressure MOCVD reactor. The film growth process is a novel N,N-dimethylamino-trimethylsilane (Me/sub 3/SiNMe/sub 2/) elimination reaction and not pyrolysis reactions employed in conventional MOCVD techniques. X-ray diffraction data show the crystalline quality and orientation of the resulting polycrystalline films were dependent on the substrate structure and growth temperature. Amorphous films were deposited below 50/spl deg/C. Films deposited at 75/spl deg/C for Sb/sub 2/Te/sub 3/ and 125/spl deg/C for Bi/sub 2/Te/sub 3/ were highly oriented with the (015) reflection plane parallel to the substrate surface. Films of Sb/sub 2/Te/sub 3/ deposited at 150/spl deg/C were highly oriented with the [00l] reflection planes parallel to the substrate surface. The electrical properties and composition of Bi/sub 2/Te/sub 3/ films deposited at 125/spl deg/C on Kapton were independent of the V/VI precursor ratio used. Variation in the composition of a Sb/sub x/Bi/sub 2-x/Te/sub 3/ ternary film across the susceptor was observed due to differences in the reaction kinetics for formation of Sb/sub 2/Te/sub 3/ and Bi/sub 2/Te/sub 3/. This unique deposition reaction provides an alternative route to prepare group V chalcogenide materials which have potential applications in solar cells, reversible optical storage, and thermoelectrics.
Starting Page	430
Ending Page	434
File Size	595011
Page Count	5
File Format	PDF
ISBN	0780332210
DOI	10.1109/ICT.1996.553521
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-03-26
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature MOCVD Tellurium Bismuth Optical films Substrates Optical reflection Material storage Semiconductor films Inductors
Content Type	Text
Resource Type	Article

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