NDLI: Structural Characteristics of Bi2Te3 and Sb2Te3 films on (001) GaAs Substrates grown by MOCVD

Content Provider	IEEE Xplore Digital Library
Author	Jeong-Hun Kim Sung-Do Kwon Dae-Yong Jeong Byeong-Kwon Ju Seok-Jin Yoon Jin-Sang Kim
Copyright Year	2006
Description	Author affiliation: Thin film Mater. Res. center, Korea Inst. of Sci. & Technol., Seoul (Jeong-Hun Kim; Sung-Do Kwon; Dae-Yong Jeong)
Abstract	Metal organic vapour phase epitaxy has been investigated for growth of $Bi_{2}Te_{3}$ and $Sb_{2}Te_{3}$ films on (001) GaAs substrates using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. High resolution TEM and X-ray diffraction patterns revealed that films had single crystalline phases with a preferential c-orientation and layered structures resulting from the van der Waals bonding nature in these materials. By optimizing growth parameters such as precursor ratio, growth temperatures, and flow rate in reactor, we could obtain Seebeck coefficient of $-160muVK^{-1}$ for $Bi_{2}Te_{3}$ and $+110muVK^{-1}$ for $Sb_{2}Te_{3}$ films, respectively. The high Seebeck coefficient and atomistically smooth surface morphologies of these materials are promising for the fabrication of a few nm thick periodic $Bi_{2}Te_{3}/Sb$ $_{2}Te_{3}super$ lattice structures for thin film thermoelectric device applications
Starting Page	411
Ending Page	413
File Size	1426978
Page Count	3
File Format	PDF
ISBN	1424408105
ISSN	10942734
DOI	10.1109/ICT.2006.331284
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-08-06
Publisher Place	Austria
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide MOCVD Tellurium Bismuth Substrates Epitaxial growth X-ray diffraction Crystallization Bonding Crystalline materials
Content Type	Text
Resource Type	Article

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