NDLI: TiNiSn: a gateway to the (1,1,1) intermetallic compounds

Content Provider	IEEE Xplore Digital Library
Author	Cook, B.A. Harringa, J.L. Tan, Z.S. Jesser, W.A.
Copyright Year	1996
Description	Author affiliation: Ames Lab., Iowa State Univ., Ames, IA, USA (Cook, B.A.)
Abstract	Recent awareness of the transport properties of Skutterudite pnictides has stimulated an interest in numerous other intermetallic compounds having a gap in the density of states at the Fermi level including the MNiSn compounds where M=(Ti, Zr, Hf). These intermetallic 'half-Heusler' compounds are characterized by high Seebeck coefficients (-150 to -300 /spl mu/V/deg.) and reasonable carrier mobilities (30 to 50 cm/sup 2//V-s) at room temperature which make them attractive candidates for intermediate temperature thermoelectric applications. Samples of TiNiSn were prepared by arc melting and homogenized by heat treatment. The temperature dependence of the electrical resistivity, Seebeck coefficient, and thermal diffusivity of these samples was characterized between 22/spl deg/C and 900/spl deg/C. The electrical resistivity and thermopower both decrease with temperature although the resistivity decreases at a faster rate. Electrical power factors in excess of 25 /spl mu/W/cm-/spl deg/C/sup 2/ were observed in nearly single phase alloys within a 300 to 600/spl deg/C temperature range. A brief survey of other selected ternary intermetallic compounds is also presented.
Starting Page	122
Ending Page	127
File Size	796379
Page Count	6
File Format	PDF
ISBN	0780332210
DOI	10.1109/ICT.1996.553270
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-03-26
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Intermetallic Electric resistance Zirconium Hafnium Thermoelectricity Heat treatment Temperature dependence Thermal resistance Conductivity Reactive power
Content Type	Text
Resource Type	Article

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