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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Beg, A. Beiu, V. Ibrahim, W. |
| Copyright Year | 2011 |
| Description | Author affiliation: Faculty of Information Technology United Arab Emirates University Al-Ain, United Arab Emirates (Beg, A.; Beiu, V.; Ibrahim, W.) |
| Abstract | Voltage reduction is a very widely used low-power technique (as reducing dynamic power quadratically, and leakage power linearly) which does sacrifice performance. An alternate technique, which is much less explored/investigated, is to rely on currents instead. The paper presents a thorough but still preliminary comparison of a recently introduced CMOS design technique which limits/reduces currents, with both the conventional/classical CMOS design, and also with a fresh sub-threshold CMOS design specifically aimed for ultra-low power (ULP). The preliminary results reported here suggest that the new design could achieve: (i) significantly lower power than classical CMOS (20–60×) without drastically degrading performances (5–20×); (ii) much better performances (100–200×) than the ULP scheme considered at power levels which are manageable (10–40x); while (iv) surpassing both of them on power-delay-product (PDP) and energy-delay-product (EDP). In particular, our inverters in 16nm are able to break the atto-Joule barrier at 300mV, and exhibit a delay of about 9ns. |
| Starting Page | 498 |
| Ending Page | 501 |
| File Size | 160514 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781612841359 |
| e-ISBN | 9781612841373 |
| DOI | 10.1109/NEWCAS.2011.5981328 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-06-26 |
| Publisher Place | France |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Inverters CMOS integrated circuits Transistors Threshold voltage Delay Logic gates CMOS technology |
| Content Type | Text |
| Resource Type | Article |
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