NDLI: Performance properties in thick film silicate dielectric layers using molecular modeling

Content Provider	IEEE Xplore Digital Library
Author	Iwamoto, N. Krishnamoorthy, A. Spear, R. Brouk, E. Gebrebrhan, A. Stifanos, M. Rutter, E. Yellowaga, D.
Copyright Year	2008
Description	Author affiliation: Honeywell UOP, Ramona, CA (Iwamoto, N.)
Abstract	Molecular modeling was employed to understand various properties found in thick film dielectric layers derived from solution-based sol-gel formulation in order to aid their development. For instance, for formulations used as planarizing layers, it was discovered that during certain process steps ionic components could be introduced which greatly influences the extent of shrinkage by up to 50%, a phenomenon not normally seen in traditional spin-on glasses (SOG). Thermodynamic calculations showed that specific ionic contaminants contribute to the cure state of the material, potentially depolymerizing the material and promoting the formation of structures that are more easily deformed. Volumetric analysis and compaction modeling demonstrated that the high extent of shrinkage is expected, depending upon the final structure of the silicate. Calculation of the relative modulus of the different suspected structures also showed that depolymerized structures contribute to the ease of compaction.
Starting Page	1
Ending Page	6
File Size	1610548
Page Count	6
File Format	PDF
ISBN	9781424421275
DOI	10.1109/ESIME.2008.4525101
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-04-20
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thick films Dielectric films Optical films Pollution measurement Silicon Dielectric measurements Dielectric materials Semiconductor device modeling Thermodynamics Compaction
Content Type	Text
Resource Type	Article

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