NDLI: The mechanical influence of the porosity and nano-scale pore size effect of the SiOC(H) dielectric film

Content Provider	IEEE Xplore Digital Library
Author	Yuan, C. Flower, A.E. van der Sluis, O. Zhang, G.Q. Ernst, L.J. Cherkaoui, M. van Driel, W.D.
Copyright Year	2008
Description	Author affiliation: Dept. of Precision & Microsyst. Eng., Delft Univ. of Technol., Delft (Yuan, C.; Flower, A.E.; van der Sluis, O.; Zhang, G.Q.; Ernst, L.J.)
Abstract	We propose a molecular modeling method which is capable of modeling the mechanical impact of the porosity and pore size to the amorphous silicon-based low-dielectric (low-k) material. Due to the electronic requirement of advanced electronic devices, low-k materials are in demand for the IC backend structure. However, due to the amorphous nature and porosity of this material, it exhibits low mechanical stiffness and low interfacial strength, as well as inducing numerous reliablity issues. The mechanical impact of the nano- scaled pore, including the porosity ratio and pore size, is simulated using molecular dynamics on the mechanical stiffness and interfacial strength. A fitting function is formulated based on the continuum homogenour theory and atomic interaction in nano-scale. The simulation results are fitted into analytical equation based on the homogenous theory.
Starting Page	1
Ending Page	5
File Size	561483
Page Count	5
File Format	PDF
ISBN	9781424421275
DOI	10.1109/ESIME.2008.4525050
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-04-20
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Dielectric films Dielectric materials Amorphous materials Chemicals Semiconductor materials Organic materials Silicon compounds Materials reliability Equations Delay effects
Content Type	Text
Resource Type	Article

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