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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Songmei Wu Bammatter, M.-O. Wei Tang Auzelyte, V. Haixia Zhang Brugger, J. |
| Copyright Year | 2013 |
| Description | Author affiliation: Microsyst. Lab., EPFL, Lausanne, Switzerland (Songmei Wu; Bammatter, M.-O.; Auzelyte, V.; Brugger, J.) || Nat. Key Lab. on Micro/Nano Fabrication Technol., Peking Univ., Beijing, China (Wei Tang; Haixia Zhang) |
| Abstract | We present in this work the fabrication of high aspect ratio nanopores in 500 nm PECVD SiC films through AAO (anodic aluminum oxide) mask. The initial AAO thin film is 180 nm thick and the diameter of nanopores is 33 ± 7 nm. We have used three plasma chemistries: $CF_{4},$ $Cl_{2}$ /Ar, and $SF_{6}/O_{2}$ to study the pattern transfer process into SiC at sub-50 nm scale by deep reactive ion etching. $CF_{4}$ and $Cl_{2}/Ar$ etchings show highly anisotropic features. Vertical pores with similar diameter as the AAO mask (33 ± 12 nm) and as deep as 400 nm (aspect ratio > 10) can be achieved by $CF_{4}$ reactant. As comparison, $SF_{6}$ $/O_{2}$ chemistry generates very different etching profiles, causing trenches both in vertical and lateral directions. Our PECVD SiC nanopores are promising candidates for robust biosensing and nanofiltration applications. |
| Starting Page | 986 |
| Ending Page | 989 |
| File Size | 1270963 |
| Page Count | 4 |
| File Format | |
| e-ISBN | 9781467363525 |
| e-ISBN | 9781467363518 |
| DOI | 10.1109/NEMS.2013.6559887 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-04-07 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon carbide Etching Nanobioscience Sulfur hexafluoride Films AAO nanopore PECVD SiC Nanopore |
| Content Type | Text |
| Resource Type | Article |
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