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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Chung, C.K. Chen, T.S. Peng, C.C. Wu, B.H. |
| Copyright Year | 2008 |
| Description | Author affiliation: Dept of Mech. Eng., Nat. Cheng Kung Univ., Tainan (Chung, C.K.; Chen, T.S.; Peng, C.C.) |
| Abstract | Ta-Si-N thin films were potentially applied as diffusion barriers for Cu interconnections. However, the thermal stability of Ta-Si-N is related to the composition and annealing methods. In this paper, we have investigated the effect of high- vacuum furnace annealing and vacuum rapid thermal annealing (RTA) on the microstructure and morphology of different nanostructured Ta-Si-N thin films fabricated by reactive cosputtering at varied Ta and Si powers and nitrogen flow ratio $(FN_{2}%=$ $FN_{2}/($ $FN_{2}+FAr)$ x 100%). As Si is added to the Ta-N compound to form Ta-Si-N, the microstructure becomes nanocrystalline grains embedded in an amorphous matrix i.e. amorphous-like microstructure, which is also affected by the nitrogen flow ratio. Amorphous-like Ta-Si-N films obtained at small 3-6 $FN_{2}%$ had smoother morphology and lower resistivity compared to the polycrystalline film at high 20 $FN_{2}%.$ The thermal stability of Ta-Si-N films increases with the Si/Ta ratio and magnitude of vacuum. Higher vacuum furnace annealing at 5 times $10^{-5}$ Torr may make both amorphous-like and polycrystalline Ta-Si-N films enduring higher temperature up to 900degC for a longer time of 1 h while the higher pressure RTA at 2 times $10^{-2}$ Torr make Ta-Si-N films transform of phase and morphology at 750-900degC just in 1 min. The increase of Si/Ta ratio may also increases the stability of Ta-Si-N films. |
| Starting Page | 982 |
| Ending Page | 985 |
| File Size | 242996 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424419074 |
| DOI | 10.1109/NEMS.2008.4484486 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-01-06 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Microstructure Morphology Transistors Rapid thermal annealing Thermal stability Furnaces Nitrogen Semiconductor films Semiconductor thin films Amorphous materials morphology Ta-Si-N nanostructure annealing |
| Content Type | Text |
| Resource Type | Article |
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