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Content Provider | IEEE Xplore Digital Library |
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Author | Khandelwal, S. Ghosh, S. Chauhan, Y.S. Iniguez, B. Fjeldly, T.A. |
Copyright Year | 2015 |
Description | Author affiliation: NTNU, Trondheim, Norway (Fjeldly, T.A.) || IIT Kanpur, Kanpur, India (Ghosh, S.; Chauhan, Y.S.) || Dept. of EECS, UC Berkeley, Berkeley, CA, USA (Khandelwal, S.) || URV, Spain (Iniguez, B.) |
Abstract | We present a physics based large signal RF compact model for Gallium Nitride HEMTs (GaN HEMTs). This surface-potential-based model is called Advance SPICE Model for GaN HEMT or ASM-GaN-HEMT model. Surface-potential (SP) in the triangular quantum well of GaN HEMTs is derived by solving Schrodinger's and Poisson's equations consistently and analytically. Core analytical drain-current model is derived using the developed SP model and drift-diffusion transport. The core model is enhanced with models for key real device effects to represent a real GaN HEMT device. A consistent intrinsic charge model is also derived from SP. The developed model is implemented in Verilog-A. Excellent model agreement with DC, S-parameters and large signal RF power sweep measurements are shown for a GaN HEMT device with width W = 40 μ956;m and number of fingers NF = 8. |
Starting Page | 1 |
Ending Page | 4 |
File Size | 625630 |
Page Count | 4 |
File Format | |
e-ISBN | 9781479984947 |
DOI | 10.1109/CSICS.2015.7314527 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2015-10-11 |
Publisher Place | USA |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | HEMTs MODFETs Gallium nitride Mathematical model Radio frequency Integrated circuit modeling Data models |
Content Type | Text |
Resource Type | Article |
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