NDLI: Challenges & Solutions for High Volume Production in SiGe BICMOS & CMOS Technologies for High-Frequency and Optical Communications

Content Provider	IEEE Xplore Digital Library
Author	Galy, P. Chevalier, P.
Copyright Year	2015
Description	Author affiliation: STMicroelectron., Crolles, France (Galy, P.; Chevalier, P.)
Abstract	This paper presents the main results of advanced BICMOS and CMOS technologies able to address new challenges in high speed optical and wireless communications for customer products and markets. Typically smart phones, smart cars, IoT and WLC massive data transfer are in our daily life. Thus, features and performances of active and passive devices on bulk and UTBB FDSOI technologies are discussed. Process, device topologies and RF characterizations of state of the art SiGe HBT BiCMOS55 and MOS transistors are mainly shown even for low power applications. Moreover, to reach high volume production, the Electro-Static Discharge (ESD) high frequency protection is one key contributor in this frame. This last point will be focused in term of generic approaches and solutions for integrated circuit designers.
Starting Page	1
Ending Page	4
File Size	1453002
Page Count	4
File Format	PDF
e-ISBN	9781479984947
DOI	10.1109/CSICS.2015.7314490
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-10-11
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electrostatic discharges CMOS integrated circuits BiCMOS integrated circuits CMOS technology Radio frequency Silicon germanium Heterojunction bipolar transistors
Content Type	Text
Resource Type	Article

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