NDLI: MIT Virtual Source RF Model as a Tool for GaN-Based LNA and Oscillator Design

Content Provider	IEEE Xplore Digital Library
Author	Radhakrishna, U. Pilsoon Choi Li-Shuan Peh Antoniadis, D.
Copyright Year	2015
Description	Author affiliation: Massachusetts Inst. of Technol., Cambridge, MA, USA (Radhakrishna, U.; Pilsoon Choi; Li-Shuan Peh; Antoniadis, D.)
Abstract	This work demonstrates the usefulness of the physics-based MIT Virtual Source GaNFET (MVSG) model in the design of GaN based RF low noise amplifiers (LNAs) and oscillators. The model with its accurate representation of small and large signal device characteristics along with RF- and low frequency noise behavior can be used for the design of LNAs with the required noise figure (NF) and oscillators with the desired frequency response including the close-in phase noise performance. The MVSG model is benchmarked against device terminal DC-, small-signal S-parameter- and noise figure measurements and is used to design an LNA with antenna switches, which achieves 3.7 dB NF with 12 V supply voltage at 5.9 GHz (IEEE 802.11p standard) [1]. A 3-stage GaN pseudo-invertor ring oscillator, delivering 21 dBm at 1.4 GHz is designed using the MVSG model to determine its accurate estimation of large-signal device-switching behavior along with the device- flicker (1/f) noise-dominated phase noise. The dependence of phase noise level on the DC component of the impulse sensitivity function (ISF) [2, 3] is confirmed using the model and measurements. In this work, the physics of carrier charge and transport in a GaN-HEMT along with device-level noise is translated into functional RF-circuit elements using the MVSG model.
Starting Page	1
Ending Page	4
File Size	2738415
Page Count	4
File Format	PDF
e-ISBN	9781479984947
DOI	10.1109/CSICS.2015.7314515
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-10-11
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Integrated circuit modeling Gallium nitride Noise measurement Mathematical model Radio frequency Phase noise
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

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