NDLI: Electrode effects on the breakdown characteristics of high-k HfO metal-insulator-metal capacitors

Content Provider	IEEE Xplore Digital Library
Author	Tang, W.M. Helander, M.G. Greiner, M.T. Ng, W.T. Lu, Z.H.
Copyright Year	2010
Description	Author affiliation: Department of Electrical and Computer Engineering, University of Toronto, Canada (Tang, W.M.; Ng, W.T.) \|\| Department of Materials Science and Engineering, University of Toronto, Canada (Helander, M.G.; Greiner, M.T.; Lu, Z.H.)
Abstract	The effects of top metal contacts on the leakage current and breakdown characteristics of HfO metal-insulator-metal (MIM) capacitors were investigated. It is found that the breakdown field strength of the devices scales with the work function of the top electrode; the higher the metal work function the higher the breakdown field strength of the devices. This observation is attributed to the different barrier height formed at the contacting metal/HfO interfaces, which results in various amount of charge injected into the HfO dielectrics. The joule heating from these injected charges increases the defect density leading to dielectric breakdown.
Starting Page	1
Ending Page	4
File Size	835001
Page Count	4
File Format	PDF
ISBN	9781424499977
e-ISBN	9781424499984
DOI	10.1109/EDSSC.2010.5713760
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-12-15
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Artificial intelligence Electrodes Films High K dielectric materials Metals MIM capacitors Electric breakdown
Content Type	Text
Resource Type	Article

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