NDLI: Characteristics of subband current ratio in double-gate MOSFET

Content Provider	IEEE Xplore Digital Library
Author	Haijun Lou Xinnan Lin Lining Zhang Xukai Zhang Jiaojiao Xu Wen Wu Zhiwei Liu Wenping Wang Wei Zhao Yong Ma He, F. Mansun Chan
Copyright Year	2010
Description	Author affiliation: Peking University Shenzhen SOC Key Laboratory, PKU HKUST Shenzhen Institute, Hi-Tech Industrial Park South, 518057, China (Wen Wu; Zhiwei Liu; Wenping Wang; Wei Zhao; Yong Ma) \|\| Department of ECE, Hong Kong University of Science and Technology, Kowloon, Hong Kong (Mansun Chan) \|\| The Key Laboratory of Integrated Microsystems, School of Computer & Information Engineering, Peking University Shenzhen Graduate School, 518055, China (Haijun Lou; Xinnan Lin; Lining Zhang; Xukai Zhang; Jiaojiao Xu; He, F.)
Abstract	The subband current is evaluated by solving the non-equilibrium Green's function (NEGF) self-consistently with Poisson's equation for the double-gate MOSFETs with different channel lengths and thicknesses. The characteristics of subband current ratio and the details of subband number M are simulated, and the results show that the characteristics of current are determined by the first subband when T is smaller than 2.5nm, while the value of T is between 3.5nm and 5nm, the current of the second subband needs to be considered. The subband current ratios are highly related to the gate voltage, while less sensitive to the channel length. The suitable subband number M is also discussed for the devices with different sizes, which must be considered in balancing the model accuracy and the efficiency.
Starting Page	1
Ending Page	4
File Size	890199
Page Count	4
File Format	PDF
ISBN	9781424499977
e-ISBN	9781424499984
DOI	10.1109/EDSSC.2010.5713686
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-12-15
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFETs Analytical models Nanowires M NEGF double-gate subband current ratio
Content Type	Text
Resource Type	Article

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