NDLI: High-performance AlO-laminated TaO MIM capacitors for RF-IC applications: effects of the AlO layer on electrical characteristics

Content Provider	IEEE Xplore Digital Library
Author	Takeda, K. Mine, T. Ishikawa, T. Imai, T. Fujiwara, T.
Copyright Year	2005
Description	Author affiliation: Central Res. Lab., Hitachi Ltd., Kokubunji, Japan (Takeda, K.; Mine, T.; Ishikawa, T.)
Abstract	The successful integration of a metal-insulator-metal (MIM) capacitor with an AlO/TaO/AlO stack is demonstrated. High capacitance density of more than 10 fF//spl mu/m/sup 2/ at 3.3 V and superior high-frequency characteristics are confirmed. The TDDB lifetime of the capacitor is strongly dependent on the electric field strength in the AlO layer, so the lifetime can be predicted by using the TDDB lifetime of a single-layer AlO capacitor. The capacitance voltage dependence of the AlO/TaO/AlO capacitor is dominated by the change in capacitance in the AlO layer. Thus, the voltage-linearity coefficients of single-layer AlO capacitors can be used to predict the coefficients of AlO/TaO/AlO capacitors.
Sponsorship	IEEE Electron Devices Soc
Starting Page	91
Ending Page	93
File Size	527383
Page Count	3
File Format	PDF
ISBN	078038752X
DOI	10.1109/IITC.2005.1499936
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-06-06
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MIM capacitors Electric variables Capacitance Leakage current Electrodes Voltage Tin High K dielectric materials Metal-insulator structures High-K gate dielectrics
Content Type	Text
Resource Type	Article

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