NDLI: Reliability of planar and FinFET SONOS devices for NAND flash applications - Field enhancement vs. barrier engineering

Content Provider	IEEE Xplore Digital Library
Author	Tzu-Hsuan Hsu Hang-Ting Lue Sheng-Chih Lai Ya-Chin King Kuang-Yeu Hsieh Rich Liu Chih-Yuan Lu
Copyright Year	2009
Description	Author affiliation: Emerging Central Lab., Macronix International Co., Ltd., 16 Li-Hsin Road, Hsinchu Science Park, Taiwan (Tzu-Hsuan Hsu; Hang-Ting Lue; Sheng-Chih Lai; Ya-Chin King; Kuang-Yeu Hsieh; Rich Liu; Chih-Yuan Lu)
Abstract	The reliability of sub-40nm SONOS NAND devices with various tunnel oxide thickness and FinFET structures are studied for future NAND Flash application. SONOS intrinsically has slow erase speed and high erase saturation for tunnel oxide ranging from 25 to 45 Å. Furthermore, the endurance degradation occurs very early at low P/E≪10, owing to the nature of electron de-trapping mechanism at tunnel oxide ≫ 20A. Thus planar SONOS is not suitable for NAND Flash applications. On the other hand, when SONOS is applied to FinFET structure, significantly faster erase speed is obtained, owing to the field enhancement effect. However, it is still hard to erase below the initial Vt. We conclude that barrier engineering, such as BE-SONOS is more efficient in providing faster erase speed at lower erase voltages without endurance degradation. We also estimated the large density (4Mb) array distribution of sub-40 nm SONOS and BE-SONOS devices, and found that the distribution width is quite insensitive to the tunnel oxide thickness. This suggests that for future scaled NAND devices the edge effect is more important in determining the P/E distribution than the tunnel oxide thickness variation.
Starting Page	154
Ending Page	155
File Size	439268
Page Count	2
File Format	PDF
ISBN	9781424427840
ISSN	1930885X
DOI	10.1109/VTSA.2009.5159336
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-04-27
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	FinFETs SONOS devices Reliability engineering Degradation Capacitors Electron traps Electronic mail Voltage Thickness control Testing
Content Type	Text
Resource Type	Article

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