NDLI: A V tunable Single Metal Single Dielectric approach using As I/I into TiN/HfO for 32nm node and beyond

Content Provider	IEEE Xplore Digital Library
Author	Petry, J. Boccardi, G. Singanamalla, R. Liu, C.S. Xiong, K. Escanes, P. Huguenin, J.-L. Tseng, J. Van Nimwegen, L. Voogt, F. Bulle-Lieuwma, C.W.T. Muller, M.
Copyright Year	2009
Description	Author affiliation: NXP-TSMC Research Center, Kapeldreef 75, B-3001 Leuven, Belgium (Petry, J.; Boccardi, G.; Singanamalla, R.; Xiong, K.; Escanes, P.; Huguenin, J.-L.; Muller, M.) \|\| NXP Semiconductors, Nijmegen, The Netherlands (Van Nimwegen, L.; Voogt, F.) \|\| Philips Research, Eindhoven, The Netherlands (Bulle-Lieuwma, C.W.T.) \|\| TSMC, 8, Li-Hsin Rd. 6, Hsinchu Science Park, 300-77 Hsinchu, Taiwan (Liu, C.S.; Tseng, J.)
Abstract	Easily integrable cost effective gate first Single Metal Single Dielectric (SMSD) solution based on As implantation into TiN/HfO with ∼ 1 nm EOT is presented. A consistent n-type shift of 250 mV down to 35 nm L is obtained by As I/I compared to the reference stack. Symmetrical threshold voltages (∼ ±0.5 V) are met for the bulk planar devices using this technique, which would corresponds to low-V (±0.2V) target for the FD FETs. The possible counter-doping effects were evaluated electrically and physically with backside SIMS. It was found to be negligible implying negligible concentration of As in the channel region. As I/I technique opens up possibility of multiple V tuning without adding any process complexity.
Starting Page	57
Ending Page	58
File Size	254277
Page Count	2
File Format	PDF
ISBN	9781424427840
ISSN	1930885X
DOI	10.1109/VTSA.2009.5159289
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-04-27
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Tin Channel bank filters Degradation Dielectrics FETs Hafnium oxide Costs Gate leakage Implants Threshold voltage
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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