NDLI: Investigation of static noise margin of Ultra-Thin-Body SOI SRAM cells in subthreshold region using analytical solution of poisson's equation

Content Provider	IEEE Xplore Digital Library
Author	Hu, V.P.-H. Yu-Sheng Wu Ming-Long Fan Pin Su Ching-Te Chuang
Copyright Year	2009
Description	Author affiliation: Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan (Hu, V.P.-H.; Yu-Sheng Wu; Ming-Long Fan; Pin Su; Ching-Te Chuang)
Abstract	This paper investigates the Static Noise Margin (SNM) of Ultra-Thin-Body (UTB) SOI SRAM cells operating in subthreshold region using analytical solution of Poisson's equation validated with TCAD simulations. An analytical SNM model for UTB SOI SRAM cells operating in subthreshold region is presented. Our results indicate that back-gate bias (V) can mitigate the Read SNM (RSNM) variability of UTB SOI SRAM cells in the subthreshold region, and the improvement of SNM variability is more significant than superthreshold region. Increasing cell β-ratio shows limited improvement on RSNM and has no benefit on SNM variability for subthreshold operation. The UTB SOI 8T SRAM cell exhibits RSNM 2X larger than the 6T SRAM cell in subthreshold region.
Starting Page	115
Ending Page	116
File Size	308683
Page Count	2
File Format	PDF
ISBN	9781424427840
ISSN	1930885X
DOI	10.1109/VTSA.2009.5159317
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-04-27
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Random access memory Poisson equations Analytical models MOSFET circuits Laplace equations MOS devices Energy consumption Power supplies Threshold voltage Lighting control
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Design and analysis of ultra-thin-body SOI based subthreshold SRAM

Static Noise Margin of Ultrathin-Body SOI Subthreshold SRAM Cells—An Assessment Based on Analytical Solutions of Poisson's Equation

Variability analysis of UTB SOI subthreshold SRAM considering Line-Edge Roughness, Work Function Variation and temperature sensitivity

Analysis of Ultra-Thin-Body SOI Subthreshold SRAM Considering Line-Edge Roughness, Work Function Variation, and Temperature Sensitivity

Ground plane SOI MOSFET based SRAM with consideration of process variation

Short-channel effects of SOI partially-depleted (PD) dynamic-threshold MOS (DTMOS) devices

Static Noise Margin of Ultrathin-Body SOI Subthreshold SRAM Cells—An Assessment Based on Analytical Solutions of Poisson's Equation

Impact of work function design on the stability and performance of Ultra-Thin-Body SOI subthreshold SRAM

An analytical model of threshold voltage and subthreshold swing for ultra-thin-film SOI MOSFETs

Investigation of static noise margin of Ultra-Thin-Body SOI SRAM cells in subthreshold region using analytical solution of poisson's equation

Similar Documents

Design and analysis of ultra-thin-body SOI based subthreshold SRAM

Static Noise Margin of Ultrathin-Body SOI Subthreshold SRAM Cells—An Assessment Based on Analytical Solutions of Poisson's Equation

Variability analysis of UTB SOI subthreshold SRAM considering Line-Edge Roughness, Work Function Variation and temperature sensitivity

Analysis of Ultra-Thin-Body SOI Subthreshold SRAM Considering Line-Edge Roughness, Work Function Variation, and Temperature Sensitivity

Ground plane SOI MOSFET based SRAM with consideration of process variation

Short-channel effects of SOI partially-depleted (PD) dynamic-threshold MOS (DTMOS) devices

Static Noise Margin of Ultrathin-Body SOI Subthreshold SRAM Cells—An Assessment Based on Analytical Solutions of Poisson's Equation

Impact of work function design on the stability and performance of Ultra-Thin-Body SOI subthreshold SRAM

An analytical model of threshold voltage and subthreshold swing for ultra-thin-film SOI MOSFETs

Investigation of static noise margin of Ultra-Thin-Body SOI SRAM cells in subthreshold region using analytical solution of poisson's equation