NDLI: Thermal treatment and underlayer effects on silane and dichlorosilane based tungsten silicide for deep sub-micron interconnection processes

Content Provider	IEEE Xplore Digital Library
Author	Yen, H. Hsia, S.T. Liu, D. Tzeng, H.P. Chen, H.H. Lu, C.Y.
Copyright Year	1995
Description	Author affiliation: Vanguard Int. Semicond. Corp., Hsinchu, Taiwan (Yen, H.; Hsia, S.T.; Liu, D.; Tzeng, H.P.; Chen, H.H.; Lu, C.Y.)
Abstract	This paper presents the use of silane and dichlorosilane based tungsten silicide in deep submicron interconnection process. The modified annealing silicidation treatment, described in this paper, can extend even silane-based tungsten silicide suitable for 0.35 /spl mu/m level contact technology. More than 3 orders of contact resistance is reduced. Dichlorosilane based tungsten silicide outperforms silane based tungsten silicide because of its better step coverage from TEM direct evidence. The modified annealing silicidation treatment using large nitrogen flow can also lower about 20% of contact resistance for dichlorosilane based tungsten silicide. Our study also indicates the contact resistance dependence on underlayers where tungsten silicide grown on amorphous silicon can achieve lower contact resistance compared with that on grainy polysilicon underlayer. This work provide a promising manufacturable solution to deep submicron high aspect ratio contact technology.
Starting Page	176
Ending Page	179
File Size	376108
Page Count	4
File Format	PDF
ISBN	078032773X
DOI	10.1109/VTSA.1995.524658
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-05-31
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Tungsten Silicides Contact resistance Annealing Silicidation Nitrogen Electrical resistance measurement Furnaces Testing Amorphous silicon
Content Type	Text
Resource Type	Article

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