NDLI: A consistent gate and substrate current model for submicron MOSFET's by considering energy transport

Content Provider	IEEE Xplore Digital Library
Author	Yih, C.-M. Lee, G.-H. Chung, S.S.
Copyright Year	1995
Description	Author affiliation: Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan (Yih, C.-M.; Lee, G.-H.; Chung, S.S.)
Abstract	Accurate modeling of the hot electron induced gate and substrate currents is of considerable importance for submicron MOS devices. In this paper, a new approach based on the simplified two-dimensional energy balance equations by incorporating the effect of transversal electric field and energy-dependent saturation velocity and relaxation time is presented. Substrate current characteristics can be predicted from the calculated energy dependent impact ionization rate. A consistent gate current is also obtained by using the same set of parameter values. Results of the gate and substrate currents present very good agreement with the experiment for a wide range of biases and channel lengths. Moreover, the conventional drift-diffusion approach tends to overestimate the calculated substrate current, while the new approach has solved the problem without difficulty.
Starting Page	127
Ending Page	130
File Size	301396
Page Count	4
File Format	PDF
ISBN	078032773X
DOI	10.1109/VTSA.1995.524647
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-05-31
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET circuits Poisson equations Impact ionization Electron mobility Power engineering and energy MOS devices Predictive models Very large scale integration Circuit optimization Numerical simulation
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in