NDLI: Physical Understanding of Strain Effects on Gate Oxide Reliability of MOSFETs

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Physical Understanding of Strain Effects on Gate Oxide Reliability of MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Irisawa, T. Numata, T. Toyoda, E. Hirashita, N. Tezuka, T. Sugiyama, N. Takagi, S.
Copyright Year	2007
Description	Author affiliation: MIRAI-ASET, Kawasaki (Irisawa, T.; Numata, T.; Sugiyama, N.)
Abstract	The strain effects on TDDB and NBTI are systematically investigated using biaxially strained Si MOSFETs and their physical origins are examined. It is found that TDDB reliability of nMOS is significantly improved in strained-Si MOSFETs, while that of pMOS is slightly degraded. These dependences are well explained by the strain-induced modulation of gate current. It is also found that NBTI reliability is degraded by applying the biaxial tensile strain. This could be due to strain-induced enhancement of tunneling probability of holes into Si-H bonding states near the MOS interface.
Starting Page	36
Ending Page	37
File Size	350452
Page Count	2
File Format	PDF
ISBN	9784900784031
DOI	10.1109/VLSIT.2007.4339717
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-06-12
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	JSAP
Subject Keyword	Capacitive sensors MOSFETs Niobium compounds Titanium compounds MOS devices Tunneling Tensile strain Degradation Bonding Oxidation NBTI Strain Reliability Gate current TDDB
Content Type	Text
Resource Type	Article

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