NDLI: A Comparative Study on the Soft-Error Rate of Flip-Flops from 90-nm Production Libraries

Content Provider	IEEE Xplore Digital Library
Author	Heijmen, T. Roche, P. Gasiot, G. Forbes, K.R.
Copyright Year	2006
Description	Author affiliation: Philips Res. Labs., Eindhoven (Heijmen, T.)
Abstract	This paper presents a study using alpha- and neutron-accelerated tests to characterize soft error rates (SER) of flip-flops that are used in 90-nm CMOS production designs. The investigated flip-flops differ in circuit schematic, $V_{T},$ drive strength, and cell height. Both the alpha- and the neutron-induced SER of flip-flops on a dedicated 90-nm test-chip showed a strong dependency on clock and data state. A strong $V_{DD}-saturation$ effect was observed for the alpha-SER under certain operational conditions. Modeling results show that the impact of process variations on flip-flop SER strongly depends on the data state. On average, the SER per bit of the investigated flip-flops is higher than the typical SER per bit of unprotected SRAMs in 90-nm. This observation and the large variation found in the flip-flop results illustrate the importance of SER characterization in order to design reliable integrated circuits
Starting Page	204
Ending Page	211
File Size	424058
Page Count	8
File Format	PDF
ISBN	0780394984
DOI	10.1109/RELPHY.2006.251218
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-03-26
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Flip-flops Production Libraries Circuit testing Clocks Latches Neutrons Error analysis Integrated circuit reliability Semiconductor device measurement process variations soft error rate SER filp-flops sequential radiation alpha-particles neutrons accelerated test 90-nm process
Content Type	Text
Resource Type	Article

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