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Content Provider | IEEE Xplore Digital Library |
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Author | Leipold, D. Allen, W. Sheehy, P. Hau, G. |
Copyright Year | 2012 |
Description | Author affiliation: ANADIGICS, Inc., Tyngsboro Design Center, MA 01879 USA (Allen, W.; Hau, G.) || ANADIGICS, Inc., Warren Design Center, NJ 07059 USA (Leipold, D.; Sheehy, P.) |
Abstract | A 1710–1755MHz hybrid power amplifier module (PAM) consisting of a CMOS driver and a GaAs HBT output stage is described. By using multiple parallel CMOS driver stages the gain and bias current expansion needed to maintain the linearity into class C operation of the bipolar output stage is generated. This extends the linear output power range by 0.5 dBm and increases the power added efficiency (PAE) at ACLR1 of −40dBc from 39.0% at 28 dBm output power to 41.3% at 28.5 dBm output power for a WCDMA modulated signal. The PA achieves 43.5% PAE at 29 dBm Pout for an ACLR1 of −37 dBc with a gain of 26 dB and supply voltage of 3.4V. |
Starting Page | 279 |
Ending Page | 282 |
File Size | 603687 |
Page Count | 4 |
File Format | |
ISBN | 9781467304139 |
ISSN | 15292517 |
e-ISBN | 9781467304160 |
e-ISBN | 9781467304153 |
DOI | 10.1109/RFIC.2012.6242281 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2012-06-17 |
Publisher Place | Canada |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Heterojunction bipolar transistors CMOS integrated circuits Power amplifiers Gallium arsenide Gain Power generation Impedance driver amplifiers CMOS GaAs pre-distortion power amplifiers amplifier biasing |
Content Type | Text |
Resource Type | Article |
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