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Content Provider | IEEE Xplore Digital Library |
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Author | Baureis, Peter Gottler, Dieter Oehler, Frank Zwicknagl, Peter |
Copyright Year | 1993 |
Description | Author affiliation: Fraunhofer Institute for Integrated Circuits, Dept. ICD, am Wetterkreuz 13, D-8520 Erlangen Federal Republic of Germany. Phone: 9131-776411, FAX: 9131-776499 (Baureis, Peter; Gottler, Dieter; Oehler, Frank) || Siemens Research Laboratories, Otto-Hahn-Ring 6, D-8000 München 83, Federal Republic of Germany. Phone: 89-63644488, FAX: 89-63640822 (Zwicknagl, Peter) |
Abstract | A fixed 15.5 dB gain, DC to 10 GHz transimpedance amplifier using AlGaAs / GaAs heterojunction bipolar transistor (HBT) technology is described. A 2 ¿m emitter non self-aligned HBT IC Process (F ¿ 40 GHz, F ¿ 40 GHz) with MOCVD grown layers is used to fabricate the amplifier. The 1 dB Power compression is measured to be at 4 dBm output power. The third-order intercept point (IP3) is 19 dBm at a DC Power of 156 mW. The compact chip size of 0.45*0.6 $mm^{2}$ and the excellent 15 Gb/s NRZ pulse response make the amplifier a good candidate for 15 Gb/s optical transmission systems. |
Starting Page | 126 |
Ending Page | 129 |
File Size | 1641353 |
Page Count | 4 |
File Format | |
ISBN | 286335134X |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 1993-09-22 |
Publisher Place | Spain |
Access Restriction | Subscribed |
Rights Holder | Editions Frontieres |
Subject Keyword | Feedback Gallium arsenide Optical amplifiers Heterojunction bipolar transistors Pulse amplifiers Gain MOCVD Power measurement Semiconductor device measurement Power generation |
Content Type | Text |
Resource Type | Article |
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