NDLI: Bias optimized IP2 & IP3 linearity and NF of a decade-bandwidth GaN MMIC feedback amplifier

Content Provider	IEEE Xplore Digital Library
Author	Kobayashi, K.W.
Copyright Year	2012
Description	Author affiliation: RF Micro Devices, Torrance, California, USA (Kobayashi, K.W.)
Abstract	This paper describes the bias-optimized performance of a 0.25–3.5GHz Cascode feedback amplifier which achieves flat-gain over a decade of BW. The LNA is fabricated using 0.25um GaN HEMT technology with fT ∼ 50 GHz and BVgd > 60V. A Cascode device is used for enhanced electrical and thermal performance but requires bias optimization. At an optimum low-noise bias of 10V–200mA, a remarkable NF of 0.88dB with P1dB > 1Watt and OIP3 of 38.7dBm is obtained at 2 GHz. This is believed to be the lowest NF achieved from a multi-octave BW flat-gain GaN LNA with greater than 1-Watt P1dB. At maximum IP2 and IP3 bias of 40V-500mA, the LNA achieves 20dB of flat-gain over a 250–2500MHz decade-band and a 3-dB BW of ∼ 3.5 GHz. An IP3 of 50.6 dBm, a high IP2 of 70.5 dBm, and a P1B of 37.5 dBm (5.6-Watts) is achieved at 2 GHz with a corresponding NF of 2.2dB. This is an improvement in NF for state-of-the-art GaN LNAs with IP3 > 50 dBm and flat decade-BW gain response. Additional GaN bias-performance combinations are also revealed which indicate promise for next generation CATV, FTTX, software defined radio and BTS applications.
Starting Page	479
Ending Page	482
File Size	509648
Page Count	4
File Format	PDF
ISBN	9781467304139
ISSN	15292517
e-ISBN	9781467304160
e-ISBN	9781467304153
DOI	10.1109/RFIC.2012.6242326
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-17
Publisher Place	Canada
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride MMICs HEMTs Linearity Noise Noise figure software defined radio (SDR) broadband Cascode Gallium Nitride high IP3 IP2 low noise linear power multi-decade bandwidth
Content Type	Text
Resource Type	Article

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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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