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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Jiankang Li Zhong Lu Yong-Zhong Xiong Debin Hou Ren Wang Wang Ling Goh Wen Wu |
| Copyright Year | 2012 |
| Description | Author affiliation: Nanyang Technological University, Singapore (Wang Ling Goh) || MicroArray Technologies, Chengdu, China (Yong-Zhong Xiong; Debin Hou; Ren Wang) || Sichuan Province Economic and Information Commission, Chengdu, China (Zhong Lu) || Nanjing University of Science and Technology, China (Jiankang Li; Wen Wu) |
| Abstract | A frequency doubler from 27 to 41 GHz fabricated in 0.13-µm SiGe BiCMOS technology with a maximum output power of 8 dBm and a power added efficiency (PAE) of 17.5% at dc power consumption of 35 mW is presented. It consists of a balun, a driver amplifier (DA), a common-base (CB) core and a medium power amplifier. The CB topology with balun is designed for wider bandwidth and better matching. The measured results showed that the doubler presents a gain of 16.8–19.8 dB, an output power of 1.3–4.3 dBm, and a fundamental rejection of better than 25.7 dB from 27 to 41 GHz with −15.5 dBm input power. The chip size is 0.75 × 0.45 $mm^{2}.$ |
| Starting Page | 345 |
| Ending Page | 348 |
| File Size | 791868 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781467304139 |
| ISSN | 15292517 |
| e-ISBN | 9781467304160 |
| e-ISBN | 9781467304153 |
| DOI | 10.1109/RFIC.2012.6242296 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-06-17 |
| Publisher Place | Canada |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Impedance matching Gain Silicon germanium Power amplifiers Power generation Frequency measurement Frequency conversion SiGe BiCMOS Balanced frequency doubler high efficiency high output power |
| Content Type | Text |
| Resource Type | Article |
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