NDLI: Modelling and simulation of the transient electromagnetic behavior of high power bus bars under switching conditions

Content Provider	IEEE Xplore Digital Library
Author	Bohm, P. Wachutka, G.
Copyright Year	2000
Description	Author affiliation: Inst. for Phys. & Electrotechnol., Tech. Univ. Munchen, Germany (Bohm, P.)
Abstract	This article presents a new approach to the evaluation of the eigendynamics of interconnects encountered in high frequency power converters and high power semiconductor modules. It is based on a three-dimensional transient electromagnetic field analysis under realistic switching conditions which allows to investigate the various distributed parasitic effects caused by short switching times, steep current and voltage gradients and therefore large di/dt. The finite element simulator NM SESES/sup TM/ has been extended by an electromagnetic kernel to solve these problems. The capability of the simulator is demonstrated by some illustrative examples.
Starting Page	303
Ending Page	307
File Size	462912
Page Count	5
File Format	PDF
ISBN	0780362691
ISSN	10636854
DOI	10.1109/ISPSD.2000.856831
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-05-22
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electromagnetic modeling Electromagnetic transients Transient analysis Power semiconductor switches Frequency conversion Electromagnetic fields Cause effect analysis Electromagnetic analysis Voltage Finite element methods
Content Type	Text
Resource Type	Article

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Modelling and simulation of the transient electromagnetic behavior of high power bus bars under switching conditions