NDLI: 4.5 kV novel high voltage high performance SiC-FET "SIAFET"

Content Provider	IEEE Xplore Digital Library
Author	Sugawara, Y. Asano, M. Singh, R. Palmour, J. Takayama, D.
Copyright Year	2000
Description	Author affiliation: Tech. Res. Center, Kansai Electr. Power Co. Inc., Amagasaki, Japan (Sugawara, Y.)
Abstract	A novel high voltage SiC MOS device named SIAFET (Static induction Injected Accumulated FET) is proposed, which has no pn junction in its on-current flow path and has a conductivity modulation by carriers injected from a p+ buried gate. SIAFET with blocking voltage (BV) of 5500 V and specific on-resistance RonS (without the conductivity modulation) of 57 m/spl Omega/cm/sup 2/ was designed by using the 6200 V mesa JTE and was fabricated using 4H-SiC substrates. Its basic operation has been confirmed for the first time and it has been demonstrated that its RonS has been shown to reduce to less than 1/6 by SIAFET action. Although its achieved BV is relatively low (2030 V and 4580 V) and its RonS is relatively high (172 m/spl Omega/cm/sup 2/ and 387 m/spl Omega/cm/sup 2/), RonS of 4580 V SiC-SIAFET is less than 1/25 that of the theoretical RonS limit of Si-MOSFET for this BV.
Starting Page	105
Ending Page	108
File Size	341696
Page Count	4
File Format	PDF
ISBN	0780362691
ISSN	10636854
DOI	10.1109/ISPSD.2000.856783
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-05-22
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Voltage Silicon carbide FETs Conductivity MOS devices Substrates Fabrication Power semiconductor devices TV Joining processes
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

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