NDLI: MDmesh/sup TM/: innovative technology for high voltage Power MOSFETs

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MDmesh/sup TM/: innovative technology for high voltage Power MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Saggio, M. Fagone, D. Musumeci, S.
Copyright Year	2000
Description	Author affiliation: R&D Dept., STMicroelectron., Catania, Italy (Saggio, M.)
Abstract	A new PowerMOSFET device, called MDmesh/sup TM/ (Multiple Drain mesh), that joins the best performance in the Power management market either in static and dynamic behavior is presented. A strong reduction in the silicon conduction losses per area allowed a valuable resize of the device area and a reduction of the used package volume. Moreover, a valuable reduction in device internal capacitance and gate charge has been observed and an optimized switching behavior has been obtained. A deep look inside the device performances will be presented and the main device features will be compared with the ones of a device having the same conduction losses fabricated with a standard technology.
Starting Page	65
Ending Page	68
File Size	396216
Page Count	4
File Format	PDF
ISBN	0780362691
ISSN	10636854
DOI	10.1109/ISPSD.2000.856774
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-05-22
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFETs Production Strips Silicon Doping Fingers Breakdown voltage Conductivity Frequency Switching loss
Content Type	Text
Resource Type	Article

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