NDLI: Improved device ruggedness by floating buffer ring

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Improved device ruggedness by floating buffer ring

Content Provider	IEEE Xplore Digital Library
Author	Ludikhuize, A.W. Heringa, A. Van Roijen, R. Van Zwol, J.
Copyright Year	2000
Description	Author affiliation: Philips Res. Lab., Eindhoven, Netherlands (Ludikhuize, A.W.)
Abstract	An integrated low-substrate-leakage diode structure is considered, operated in reverse breakdown mode, having a parasitic npn transistor. At high current, the Kirk effect, causing shift of the potential by the space charge of moving carriers, leads to high electric fields and causes device degradation. The application of a protective n+ buffer ring around the cathode redistributes field and current and improves the ruggedness. This principle is also successfully applied for improved ESD performance of a lateral DMOST in a Silicon-on-Insulator process.
Starting Page	153
Ending Page	156
File Size	403256
Page Count	4
File Format	PDF
ISBN	0780362691
ISSN	10636854
DOI	10.1109/ISPSD.2000.856794
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-05-22
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Cathodes Electrostatic discharge Semiconductor diodes Anodes Electric breakdown Testing Kirk field collapse effect Silicon on insulator technology Tin Breakdown voltage
Content Type	Text
Resource Type	Article

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