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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Fischer, M. Nagele, M. Eichner, D. Schollhorn, C. Strobel, R. |
| Copyright Year | 1995 |
| Description | Author affiliation: Universitat Stuttgart (Fischer, M.) |
| Abstract | This paper describes the integration of surface microma chining with polysilicon and a standard CMOS process with aluminium gates. A demultiplexer circuit for addressing a micromachined mirror out of a line of eight mirrors is realized as example. The mirrors are electrostatically deflectable with driving voltages of about 20 V. A diffused p-well is used as counter electrode. Due to the properties of the applied p-well CMOS process with aluminium gates a complete integration of the CMOS process and the surface micromachining is necessary. The applied process is described. |
| Starting Page | 305 |
| Ending Page | 307 |
| File Size | 554091 |
| Page Count | 3 |
| File Format | |
| ISBN | 9163034735 |
| DOI | 10.1109/SENSOR.1995.717179 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1995-06-25 |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Mirrors CMOS process Micromachining Aluminum Circuits Silicon Metallization Actuators Electrodes CMOS technology |
| Content Type | Text |
| Resource Type | Article |
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