NDLI: Characterization and modeling of low-frequency noise in CVD-grown graphene FETs

Content Provider	IEEE Xplore Digital Library
Author	Mukherjee, C. Aguirre-Morales, J.D. Fregonese, S. Zimmer, T. Maneux, C. Happy, H. Wei, W.
Copyright Year	2015
Description	Author affiliation: Lab. de l'Integration du Materiau au Syst., Univ. of Bordeaux, Talence, France (Mukherjee, C.; Aguirre-Morales, J.D.; Fregonese, S.; Zimmer, T.; Maneux, C.) \|\| Inst. d'Electron., de Microelectron. et de, Nanotechnol., Univ. Lille 1, Villeneuve-d'Ascq, France (Happy, H.; Wei, W.)
Abstract	In this paper, we report the low-frequency noise characterization of CVD -grown Graphene FETs (GFET). Low-frequency measurements indicate a dominant contribution of 1/f noise in the drain current noise source. A quadratic dependence of the drain current-noise on drain current is observed. An overall comparison between different geometries of the two generations of the CVD GFETs is shown in terms of flicker noise levels and impact of access resistances on the noise response. The noise level inversely depends on the graphene area of the GFETs indicating that the locations of the primary noise sources are in the graphene layers. The flicker and Johnson noise sources are introduced in a compact model with DC parameters of the CVD GFET. Results from the noise compact model are validated with the measurement results showing good agreement.
Starting Page	176
Ending Page	179
File Size	566952
Page Count	4
File Format	PDF
ISBN	9781467371339
ISSN	19308876
e-ISBN	9781467371353
DOI	10.1109/ESSDERC.2015.7324742
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-09-14
Publisher Place	Austria
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Graphene Transistors Low-frequency noise Noise measurement 1f noise Resistance Frequency measurement access resistance Graphene FETs CVD flicker noise traps
Content Type	Text
Resource Type	Article

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