NDLI: Fabrication and Analysis of CMOS Fully-Compatible High Conductance Impact-Ionization MOS (I-MOS) Transistors

Content Provider	IEEE Xplore Digital Library
Author	Charbuillet, C. Dubois, E. Monfray, L. Bouillon, P. Skotnicki, T.
Copyright Year	2006
Description	Author affiliation: STMicroelectron., Crolles (Charbuillet, C.)
Abstract	This paper reports on a new process to realize impact-ionization MOSFETs (I-MOS) with gate length down to 50nm. This process is an adaptation of a standard 90nm flow, which assures a perfect compatibility with conventional CMOS. The definition of the $n^{+}$ and $p^{+}$ regions of the I-MOS is based on two shifted lithography steps using the standard source/drain mask. An analytical model for the breakdown voltage of an ID p-i-n diode has also been developed to express the breakdown voltage of I-MOS devices as a function of the gate and intrinsic lengths, and the doping level. This model has been validated by the experimental results. An extremely low experimental device resistance (270 Omega.mum) is reported at a gate length of 55 nm, placing the I-MOS architecture favorably with respect to ITRS requirements. This performance is explained by the much higher carrier concentration generated by impact ionization when compared to the conventional MOS. Channel resistance is found negligible and current only limited by the source/drain (S/D) resistance
Starting Page	299
Ending Page	302
File Size	4466222
Page Count	4
File Format	PDF
ISBN	1424403014
ISSN	19308876
DOI	10.1109/ESSDER.2006.307697
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-09-19
Publisher Place	Switzerland
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Fabrication MOSFETs CMOS process Lithography P-i-n diodes Impact ionization Leakage current Silicon Voltage Conducting materials
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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