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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Guo Wei-lian Niu Ping-juan Liang Hui-lai Zhang Shi-lin |
| Copyright Year | 2001 |
| Description | Author affiliation: Nat. Lab. for Superlattices & Microstructures, Beijing, China (Guo Wei-lian; Niu Ping-juan; Liang Hui-lai; Zhang Shi-lin) |
| Abstract | We designed and fabricated an AlAs/GaAs/InGaAs/GaAs/AlAs Resonant Tunneling Diode (RTD) with two types of epitaxial structures grown by Molecular Beam Epitaxy (MBE). The devices have shown excellent I-V characteristics with peak-valley current ratio (PVCR) 5:1 at room temperature and a high peak current density. The DC and AC characterizations are reported and analyzed. |
| Sponsorship | Chinese Inst. Electron. |
| Starting Page | 1403 |
| Ending Page | 1405 |
| File Size | 183825 |
| Page Count | 3 |
| File Format | |
| ISBN | 0780365208 |
| DOI | 10.1109/ICSICT.2001.982164 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2001-10-22 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Resonant tunneling devices Circuit simulation Molecular beam epitaxial growth Gallium arsenide Temperature Current density Semiconductor diodes Lungs Laboratories Superlattices |
| Content Type | Text |
| Resource Type | Article |
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