NDLI: Two dimension current transport of the novel large coupled optical cavity semiconductor lasers

Content Provider	IEEE Xplore Digital Library
Author	Jianjun Li Wenjun Zhu Peng Lian Bifeng Cui Ying Liu Jingyu Du Guo Gao Deshu Zou Guangdi Shen
Copyright Year	2001
Description	Author affiliation: Dept. of Electron. Eng., Beijing Polytech. Univ., China (Jianjun Li; Wenjun Zhu; Peng Lian; Bifeng Cui; Ying Liu; Jingyu Du; Guo Gao; Deshu Zou; Guangdi Shen)
Abstract	In order to study the current transport of the novel semiconductor laser diode, which has several active regions cascaded by tunnel junctions, a two dimension model is built. By using the finite difference method, the current density and carriers within the device can be obtained. According to the simulation results, there exists a severe current spreading for the novel device, so we proposed a double-side strip structure to confine the carriers along the lateral direction. Experimental result shows that for a 4-active region laser combined with the double-side strip structure, the slop efficiency is as high as 2.97W/A, and an output power of 4.44W can be reached at 2A.
Sponsorship	Chinese Inst. Electron.
Starting Page	1292
Ending Page	1295
File Size	203105
Page Count	4
File Format	PDF
ISBN	0780365208
DOI	10.1109/ICSICT.2001.982137
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-10-22
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Optical coupling Semiconductor lasers Strips Laser modes Quantum cascade lasers Diode lasers Finite difference methods Current density Carrier confinement Power lasers
Content Type	Text
Resource Type	Article

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