NDLI: The analysis and measurement of electric field crosstalk on the GaAs IC's microstrip electrodes utilizing internal electro-optic sampling method

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Volume 2 - 2001

A compact serial RF MEMS switch for S-band application

Design and fabrication of RF MEMS capacitive switch on silicon substrate with advanced IC interconnect technology

2/spl times/2 torsion-mirror optical switch arrays with monolithically integrated fiber holding structures

Study of a novel silicon micromachined gyroscope

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Testing and analysis of lifetime of a vertical bulk MEMS switch

Millimeter wave phase shifters with periodically spaced MEMS bridges loaded

An effective method to increase sensitivity and stability of the integrated gas sensor with sensing film annealing at higher temperature

Zeolite-coated microcantilever gas sensor

A mass-loading effect LiNbO/sub 3/ SAW sensor

The design and fabrication of a miniaturized differential-capacitive triaxial accelerometer

Design of a PZT based cantilever structure

The development of the nanocrystal silicon film FEA pressure sensor

Fabrication of micromachined infrared thermopile detector using novel front etch process

A system design method of micro-g silicon accelerometer with a CMOS precision interface circuit

A simple method for primary testing the micromachining piezoresistive accelerometer with a range more than kilo g

The investigation of the detection mechanism for micromachined accelerometers with gaseous proof mass

MOSFET differential amplifier with input pair and active load pair being stress-sensitive both

Preparation and etching of porous silicon as a sacrificial layer used in RF-MEMS devices

Design and simulation of a novel micromachined comb-gimbal gyroscope

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Technology-dependent modeling of deep-submicron MOSFET's and ULSI circuits

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Modeling and simulation of RLC interconnect effects with the AWE method

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The challenges and opportunities in GHz microprocessor design on 0.13 /spl mu/m and beyond technologies

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The analysis and measurement of electric field crosstalk on the GaAs IC's microstrip electrodes utilizing internal electro-optic sampling method

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Volume 1 - 2001

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

Proceedings of 4th International Conference on Solid-State and IC Technology

The analysis and measurement of electric field crosstalk on the GaAs IC's microstrip electrodes utilizing internal electro-optic sampling method

Content Provider	IEEE Xplore Digital Library
Author	Zhang Daming Zhang Hongbo Yang Han Chen Kaixin Sun Wei Xu Wu Yi Maobin
Copyright Year	2001
Description	Author affiliation: State Key Lab. on Integrated Optoelectronics, Jilin Univ., Changchun, China (Zhang Daming; Zhang Hongbo; Yang Han; Chen Kaixin; Sun Wei)
Abstract	The electric field crosstalk of microstrips on a GaAs integrated circuit was calculated by static state finite difference method. The crosstalk was also measured by a practical internal electro-optic sampler. The principles of electro-optic sampling and finite difference method were introduced. When the width of active electrode was 5 /spl mu/m and the distance between the two electrodes was 10 /spl mu/m, the practical measured and theory crosstalk value was about 40% and 46%, respectively.
Sponsorship	Chinese Inst. Electron.
Starting Page	1118
Ending Page	1120
File Size	194297
Page Count	3
File Format	PDF
ISBN	0780365208
DOI	10.1109/ICSICT.2001.982094
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-10-22
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electric variables measurement Crosstalk Gallium arsenide Microstrip Electrodes Semiconductor device measurement Optical sensors Photonic integrated circuits Earth Observing System Optical beams
Content Type	Text
Resource Type	Article

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