NDLI: Thermal analysis of InGaAs/AlGaAs quantum well lasers diode by atomic force microscope (AFM)

Content Provider	IEEE Xplore Digital Library
Author	Weiling Guo Tao Yin Peng Lian Ying Liu Guo Gao Deshu Zou Guangdi Shen Haoming Chen
Copyright Year	2001
Description	Author affiliation: Dept. of Electr. Eng., Beijing Polytech. Univ., China (Weiling Guo; Tao Yin; Peng Lian; Ying Liu; Guo Gao; Deshu Zou; Guangdi Shen)
Abstract	In this paper, a 4 /spl mu/m ridge waveguide 980 nm InGaAs/AlGaAs quantum well laser diode is fabricated. It shows excellent optical and electrical characteristics. The output power is 68 mW with a threshold current of 35 mA. The far-field pattern shows fundamental transverse mode operation. Thermal properties of the diodes are presented by atomic force microscope (AFM) images. They clearly show the filling layer of SiO/sub 2/ near the ridge and that the active layer is the more thermal area in the cavity surface. The optical and electrical properties of 100 /spl mu/m wide stripe laser diodes are studied and thermal analysis is performed through the threshold current density at different operation temperatures.
Sponsorship	Chinese Inst. Electron.
Starting Page	1066
Ending Page	1069
File Size	182006
Page Count	4
File Format	PDF
ISBN	0780365208
DOI	10.1109/ICSICT.2001.982081
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-10-22
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thermal force Atomic force microscopy Indium gallium arsenide Diode lasers Atomic beams Optical waveguides Atom optics Threshold current Electric variables Power generation
Content Type	Text
Resource Type	Article

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