NDLI: AlGaN/GaN HFETs for low noise applications

Content Provider	IEEE Xplore Digital Library
Author	Adesida, I. Lu, W. Kumar, V.
Copyright Year	2001
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA (Adesida, I.; Lu, W.; Kumar, V.)
Abstract	GaN and related materials have recently attracted significant interest for applications in high power electronics capable of operation at elevated temperatures. Although the growth and processing technology for SiC, the other viable wide bandgap semiconductor, is more mature, the AlGaInN material system offers numerous advantages. These include wider bandgaps, excellent transport properties, and the availability of bandgap engineering. All these advantages have led to rapid progress in the realization of various GaN-based electronic devices, especially the AlGaN/GaN heterojunction field effect transistor (HFET). This paper presents recent progress in the development of fabrication processes and device performance of AlGaN/GaN HFETs at the University of Illinois. A unity current gain cut-off frequency (f/sub T/) of over 100 GHz and a maximum oscillation frequency (f/sub max/) of 155 GHz were demonstrated for AlGaN/GaN HFETs with a gate length of 0.12 /spl mu/m on SiC substrates grown by MOCVD. These devices exhibited excellent microwave noise performance with a minimum noise figure (NF/sub min/) of 0.53 dB and an associated gain (G/sub a/) of 12.1 dB at 8 GHz achieved. Results of devices on sapphire substrates are also presented.
Sponsorship	Chinese Inst. Electron.
Starting Page	1163
Ending Page	1168
File Size	460756
Page Count	6
File Format	PDF
ISBN	0780365208
DOI	10.1109/ICSICT.2001.982106
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-10-22
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Aluminum gallium nitride Gallium nitride HEMTs MODFETs Semiconductor device noise Semiconductor materials Silicon carbide Photonic band gap Cutoff frequency Substrates
Content Type	Text
Resource Type	Article

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