NDLI: Combined effect of mechanical stressors and channel orientation on mobility in FDSOI n and p MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Gamiz, F. Donetti, L. Rodriguez, N. Sampedro, C. Faynot, O. Barbe, J.C.
Copyright Year	2012
Description	Author affiliation: CEA-LETI, Grenoble, France (Faynot, O.; Barbe, J.C.) \|\| Nanoelectronics Research Group, University of Granada, Spain (Gamiz, F.; Donetti, L.; Rodriguez, N.; Sampedro, C.)
Abstract	We have calculated the combined effect of biaxial and uniaxial strain in FDSOI MOSFETs for different channel orientations using a comprehensive Monte Carlo simulator. Our results confirm that tensile uniaxial strain improves the electron mobility of sSOI channels, with low impact of channel orientation, or silicon thickness, i.e., biaxial and uniaxial strains have cumulative effects. In the case of holes, the effect of compressive uniaxial strain strongly depends on the channel orientation and on the Ge mole fraction of the sSOI channel: for low x, compressive uniaxial strain enhances the hole mobility (cumulative effects); for high x, compressive uniaxial strain cancels the mobility enhancement achieved by the biaxial strain.
Starting Page	1
Ending Page	2
File Size	690924
Page Count	2
File Format	PDF
ISBN	9781467326902
ISSN	1078621X
e-ISBN	9781467326919
e-ISBN	9781467326896
DOI	10.1109/SOI.2012.6404380
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-10-01
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Uniaxial strain Electron mobility Silicon Substrates Tensile strain
Content Type	Text
Resource Type	Article

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