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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Sarfraz, S. Kumar, R.V. Udrea, F. Ali, S.Z. |
| Copyright Year | 2014 |
| Description | Author affiliation: Dept. of Mater. Sci. & Metall., Univ. of Cambridge, Cambridge, UK (Sarfraz, S.; Kumar, R.V.) || Dept. of Eng., Univ. of Cambridge, Cambridge, UK (Udrea, F.) || Cambridge CMOS Sensors Ltd., Cambridge, UK (Ali, S.Z.) |
| Abstract | This paper presents an experimentally verified geometry dependent predictive FEM model of a high temperature closed membrane thermal conductivity sensor. The sensor was developed using SOI CMOS MEMS technology. The FEM model presents a systematic approach to design thermal conductivity sensors by understanding heat transfer mechanisms between the sensor and the analyte environment. It also discusses how response time and sensor sensitivity are influenced by geometry of the sensor. The sensor was fabricated at a commercial foundry using a 1 μm process and measures only 1×1 $mm^{2}.$ The model establishes that a tradeoff is required between power consumption, response time and sensitivity based on the end user application. |
| Starting Page | 606 |
| Ending Page | 609 |
| File Size | 1063376 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781479901623 |
| DOI | 10.1109/ICSENS.2014.6985071 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2014-11-02 |
| Publisher Place | Spain |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Conductivity Heat transfer Finite element analysis Temperature sensors CMOS integrated circuits high temperature FEM model thermal conductivity sensor CMOS MEMS |
| Content Type | Text |
| Resource Type | Article |
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