NDLI: Achieving high mobilities in solution-processable organic FETs by minimizing contact effects

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2011 International Semiconductor Device Research Symposium (ISDRS)

2009 International Semiconductor Device Research Symposium

2007 International Semiconductor Device Research Symposium

ISDRS 2007 Committees

Aldert vad der Ziel award

Technical session schedule

2007 International semiconductor device research symposium

Table of contents

Strained Si n-FET featuring compliant SiGe Stress Transfer Layer (STL) and Si source/drain stressors for performance enhancement

Superior n-MOSFET performance by optimal stress design

Temperature dependent transport characteristics of multi-bridge-channel MOSFETs (MBCFETs)

New bi-directional T-shaped triple gate n-type poly-si TFT by a low-temperature SLS-process for reducing kink effects

InAs growth on submicron (100) SOI islands for InAs-Si composite channel MOSFETs

Self-aligned inversion n-channel InAs/GaAs MOSFET with TiN gate and Ga) dielectric

Using SiGe technology in extreme environments

Addressing challenges in device-circuit modeling for extreme environments of space

Effects of cryogenic temperatures on small-signal MOSFET capacitances

Controlled localized heating on integrated circuits for cold-ambient temperature applications

SiGe HBT compact modeling for extreme temperatures

Quantum mechanical study of gate leakage current in double gate MOS structures

Effects of nitrogen incorporation by plasma immersion ion implantation on electrical characteristics of high-k gated MOS devices

Large leakage current reduction of silicon oxide and high-K oxides using the phonon-energy-coupling enhancement effect

InGaAs n-MOS devices integrated using ALD-HfO/metal gate without surface cleaning and interfacial layer passivation

Electrical properties of HfO/InAs MOS capacitors

Interface dipole mechanism and NMOS Ni-FUSI gate work function engineering using rare-earth metal (RE)-based dielectric interlayers

Integrated solid-state optoelectronic sensor system for biochemical detection and quantification

Numerical modeling of nanotube embedded chemicapacitive sensors

Barrier height modulation and dipole moments in metal-molecule-silicon diodes

AU/ZNO-nanocomposite/(100)SI N-P heterojunction diodes for gas sensors

Effects of oxygen content on the structural and sensing properties of Y sensing membrane for pH-ISFET application

Sensing characteristics of a novel MISiC Schottky-diode hydrogen sensor with HfO as gate insulator

Simulation of silicon nanowire tunneling field-effect transistors including quantum effects

Silicon nano-wire impact ionization transistors with multiple-gates for enhanced gate control and performance

Device and circuit modeling using novel 3-state quantum dot gate FETs

Poly-silicon quantum dot single electron transistors

A quantum dot memory cell based on spin polaron formation

A novel capacitor-less 2-T SOI DRAM cell

A comparison of 63 MeV proton and 10 keV X-ray radiation effects in 4H-SiC depletion-mode vertical trench JFETs

Advanced rad hard SRAM development and hardware test results

Hydrogen-terminated boron-doped diamond films under intense gamma irradiation

Proton-induced SEU in SiGe digital logic at cryogenic temperatures

High resistivity material for mitigating linear energy transfer sensitivities in highly scaled Cmos Sram cells

Thermal and humidity stability of Ge thin layers fabricated by high-density plasma nitridation

Electron capture and emission at interface states in As-oxidized and NO-annealed SiO/4H-SiC

Impact of nitridation on negative and positive charge buildup in SiC gate oxides

A high-k Y charge trapping layer for high-density flash memory application

Novel SONOS-type nonvolatile memory device with stacked tunneling and charge-trapping layers

Effects of Gate-Edge Metamorphoses (GEM) on device characteristics of scaled MOSFETs

A quantum mechanical model of gate leakage current for scaled NMOS transistors with ultra-thin High-K dielectrics and metal gate electrodes

Impact of local poly-Si gate depletion on Vth variation in nanoscale MOSFETs investigated by 3D device simulation

Write/erase speed modeling of scaled SONOS and TANOS nonvolatile semiconductor memory (NVSM) devices

Investigation of a MOSCAP using NEGF

Re-configurable all-optical devices based on electrically controlled cross-polarized wave conversion

Single poly EEPROM with N-well and stacked MIM capacitor for control gate

On-state and switching performance investigation of sub-50nm L-DUMGAC MOSFET design for high-speed logic applications

Impact of laterally asymmetric channel and gate stack architecture on device performance of surrounding gate MOSFET (LACGAS SGT): A simulation study

Enhanced performance in strained n-FET with double-recessed Si:C source/drain and lattice-mismatched SiGe strain-transfer structure (STS)

Simulation study on negative read biasing effects for the reliable operation of NOR type floating gate flash memory devices

Fin width variation effects on program disturbance characteristics in a NAND type bulk fin SONOS flash memory

Fin and recess channel MOSFET (FiReFET) for performance enhancement of Sub-50 nm DRAM cell

New EEPROM concept for single bit operation

Optimum design of spacer-type storage nodes in recessed channel structure for 2-bit/cell SONOS flash memory cell

FinFETs with both large body factor and high drive-current

A novel SiGe-On-Insulator IMOS device with reduced bias voltages

Comparative study of $p^{+}/n^{+}$ gate modified Saddle MOSFET and $p^{+}/n^{+}$ gate bulk FinFETs for sub-50 nm DRAM cell transistors

Application of a switch-type comparator in 4-b flash ADC

Fin flash memory cells with separated double gates

High capacitance battery for powering distributed networks node devices

Engineered surfaces of multifunctional and molecular diamond for biosensing

Transistor with moving gate to control electron flow

Rapid melt growth of Ge tunnel junctions for interband tunnel transistors

Photodetector with uniform response in 620 nm to 870 nm range

Alternative MOS devices for the manufacture of high-density ICs

Predicting the reliability of metal-insulator-metal capacitors (MIMC) in analog devices by modeling

Development of solid state left-handed materials using intrinsic quantum states

A quantum mechanical mobility model for scaled NMOS transistors with ultra-thin high-K dielectrics and metal gate electrodes

A compact model for fully overlapped LDD FD SOI MOSFETs

Drain current model for undoped symmetric double-gate FETs using a velocity saturation model with exponent n=2

Analysis of the BSIMSOI threshold voltage model for short channel PD-SOI DTMOS

Wavefunction penetration effect on C-V characteristic of double gate MOSFET

An analytic, compact model of threshold voltage variations for SONOS memory cells due to lateral migration

An alternate approach of modeling the direct tunneling (DT) current through multi-gate stacks in high-κ Devices

Modeling special high frequency devices using artificial neural networks

A new impact ionization current model applicable to both bulk and SOI MOSFETs by considering self-lattice-heating

Physics-based numerical simulation for design of high-voltage, extremely-high current density SiC power devices

Redesign and optimization of semiconductor devices

Thermopile infrared detector fabricated with dry silicon etchant XeF

An adaptive nonlinear estimator for the MEMS capacitive accelerometer based on adaptive input-output feedback linearization

Effect of squeeze-film damping on the dynamic behavior of circular and rectangular microplates

Fabrication of SnO/CNTs formaldehyde gas sensor

Embedded sensors for mechanical stress monitoring in copper damascene interconnects

Functionalized organic semiconductor-based field-effect transistors for phosphonate vapor detection

Low voltage charge-balanced capacitance-voltage conversion circuit for one-side-electrode-type fluid-based inclination sensor

Fluorescence enhancement by surface gratings

Nanostructured substrates for SERS detection of serotonin to indicate heart transplant rejection

Towards a smart adaptive feedback circuit for microsensors

Study of low-temperature and post-stress hysteresis in high-k gate dielectrics

Temperature dependant characteristics of scaled NMOS transistors with ultra-thin high-K dielectrics and metal gate electrodes

A comparative study of Mos memory structures that contain platinum or gold nanoparticles

The effects of plasma treatment on the thermal stability of HfAlO thin films

Modeling and characterization of soft breakdown phenomena in MOS devices with ultrathin high-κ gate dielectric

Ballisticity at very low drain bias in DG SOI Nano-MOSFETs

The role of the temperature boundary conditions on the gate electrode on the heat distribution in 25 nm FD-SOI MOSFETs with SiO and gate-stack (High-K Dielectric) as the gate oxide

Nitrogen gas flow ratio controlled PVD TiN metal gate technology for FinFET CMOS

STI Mechanical-stress induced subthreshold kink effect of 40nm PD SOI NMOS device

Non-isothermal circuit for SOI MOSFETs for electrothermal simulation of SOI integrated circuits

Technological constrains of bulk FinFET structure in comparison with SOI FinFET

An enhanced model for circuit simulation of polymer photodiodes and solar cells

Design of an organic TFT pixel electrode circuit with enhanced current programming method for active-matrix OLED displays

Solution process ZnO and pentacene bilayer transistor: ambipolar, p-channel and n-channel operation

The operation of a-Si:H TFTs flexible electronics on plastic substrate

Three-dimensional nano electronics by dielectrophoretic assembly on a flexible substrate

Chip-in-flex technology for flexible electronics applications

Deposition of nanocrystalline silicon thin film without substrate heating for flexible electronics

Novel method for crystallization of amorphous silicon for poly silicon liquid crystal displays

Vertical integration using transfer printing

Development of learning modules for semiconductor and device courses

Integration of physics/chemistry into teaching of electronic devices in undergraduate engineering technology programs

Wire drawing tool for IC and MEMS CAD optimized for creating and editing wires on multiples of 45 degrees

Relating electrical and computer engineering to the high school classroom

K-12 teachers forum on microelectronics and nanotechnology

Corner lot process variation effects on high speed ADCs for satellite receivers

Dual band ultraviolet AlGaN photodetectors for space applications

Optimization of PIN photodiodes parameters for enhanced proton radiation tolerance based on numerical simulations

Numerical simulations of carrier transport in pillar structured solid state thermal neutron detector

Improved RF power harvesting circuit design

A physically designed 2.2 GHz OOK receiver for minimum power wireless sensor network applications

Design and implementation of a device network application for distributed line-crossing recognition

Low power receiver design utilizing weak inversion and RF energy harvesting for demodulation

Using device characteristics to obtain a low-power temperature-insensitive oscillator for smart dust networks

Integration of small antennas for ultra small nodes in wireless sensor networks

Relative intensity noise study in the injection-locked integrated electroabsorption modulator-lasers

Analysis of the mechanism and characteristic for energy loss in a gate-commutated thyristor

Spatially resolving the degradation of SPC thin-film transistors under AC stress

Nshallow junction formation using plasma doping and rapid thermal annealing

40 V high voltage arbitrary waveform pulse generator at automatic parametric tester

An experimental method allowing quantifying and localizing failed cells of an EEPROM CAST after a retention test.

Dimensional dependences of the dynamic-NBTI with 1.2 nm N20-ISSG oxynitrides

Charging effect in germanium nanocrystals embedded in a SiO2 matrix

Spontaneous emission modification analysis of hexagonally shaped nanowire lasers

Electrical sorting of carbon nanotube transistors for mass-producible bio-sensors

RF Nanoelectromechanical switch employing nanowires

Integrating TiN only bottom plate metal-insulator metal capacitor (MIMC) for contamination free manufacturing

Impact of width effect on performance enhancement in NMOSFETs with silicon-carbon alloy stressor and stress CESL

Improvement of Charge Programming and Retention by NH Plasma Treatment on Tunnel Oxide for SiO Tri-layer Memory Devices

Low resistivity hafnium nitride thin films as diffusion barriers for Cu interconnects

Enhancement of critical dimension of wet-etched thick insulator holes in triode CNT-FED devices

A new self-heating effects model for 4H-SiC MESFETs

1-D wavefunction localization and effective quantum wire behavior inside QWs deposited on textured GaN materials

GaN MESFET growth on vicinal sapphire by MOVPE

Gate dielectric engineering of sub quarter micron AlGaN/GaN metal insulator semiconductor heterostructure field effect transistor (MISHFET) for high gain characteristics

2-Dimensional simulation and characterization of deep-submicron AlGaN/GaN HEMTs for high frequency applications

Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo Simulation

Two-dimensional analytical sub-threshold modeling and simulation of Gate Material Engineered HEMT for enhanced carrier transport Efficiency

The limiting frontiers of maximum DC voltage at the drain of SiC microwave power transistors in case of class-A power amplifier

Plasmon-assisted power dissipation in GaN-based 2DEG channels for power HFETs

Interface study of atomic-layer-deposited HfO/NO-nitrided SiO gate dielectric stack on 4H SiC

Effect of the aspect ratio in AlGaN/GaN HEMT’s DC and small signal parameters

Evolution of annealed undoped single crystal ZnO Surfaces and Implications for Schottky Barrier height

AlGaN/GaN HEMT without Schottky contact on the dry-etched region for high breakdown voltage

Modeling and design of a monolithically integrated power converter on SiC

Implant activation in GaN Using an AlN cap

Optical and electrical properties of Al/ZnO-nanocomposite/Si n-p diodes

A new ultra-fast charge pumping measurement technique for N characterization without relaxation

Projections of Schottky Barrier source-drain Gallium Nitride MOSFET based on TCAD simulation and experimental results

Pseudo quantum dot behavior due to excitonic transitions in wide gap quantum wire lasers: InGaN-AlGaN and ZnCdSe-ZnMgSSe material systems

Simultaneous study of nickel based ohmic contacts to Si-face and C-face of n-type silicon carbide

Evaluation of 4H-SiC DMOSFETs for power converter applications

Effect of P-type cladding layer and P++-GaN layer of InGaN/GaN MQWs blue LED

Normally-off AlGaN/GaN HEMTs with InGaN cap layer: A theoretical study

Investigation of nanocrystalline diamond films as UV transparent Ohmic contacts to GaN

Thermal stability of 5 nm barrier InAlN/GaN HEMTs

Design and modeling of a high f and f heterojunction bipolar transistor

Complex permittivity and permeability of single- and multi-walled carbon nanotubes at high microwave frequencies and quantifying microwave absorption

Auxiliary resistive components for millimeter to sub-mm astronomical observatories

Design and simulation of strained Si/SiGe dual channel MOSFETs

Impacts of a buffer layer and hi-wafers on the performance of strained-channel NMOSFETs with SiN capping layer

Reliability of strained-channel NMOSFETs with SiN capping layer on hi-wafers with a thin LPCVD-TEOS buffer layer

Strained-Si:C-source/drain NMOSFETs for channel strain enhancement

Impacts of precursor flow rate and temperature of PECVD-SiN capping films on strained-channel NMOSFETs

The effect of GE mole fraction on the electrical characteristics of nanoscale Si/SiGe heterostructure pMOSFET

Comparisons on performance improvement by nitride capping layer among different channel directions nMOSFETs

Core-shell germanium-silicon nanoparticle structure for high κ nonvolatile memory applications

Phonon heat dissipation in silicon

CMOS-compatible light emission device based on thin aluminum nitride film containing Al nanocrystals

High-gain optoelectronic amplification circuit for integrated optical detector

Diamondoids in nanotechnology: First-principles simulation of electronic structure and nonlinear optical response in adamantane

The electrical characteristic of commercial GaN blue light emitting diode

Design and characterization of a gain-enhanced floating gate-body tied photodetector in Silicon on Sapphire CMOS

Integrated CMOS photo-transistor array for visual light identification (ID)

Maximum number of longitudinal modes oscillating in a quantum dot laser due to spatial hole burning

Challenges in SiC power MOSFET design

Status of 1200V 4H-SiC Power DMOSFETs

Demonstration of 10 kV, 50A 4H-SiC DMOSFET with stable subthreshold characteristics across 25–200 °C operating temperatures

Exploring the design space of rugged seven lithographic level silicon carbide vertical JFETs for the development of 1200-V, 50-A devices

Demonstration of the first power IC on 4H-SiC

Computational lithography for nanostructure science and technology

Impact of solid phase epitaxial regrowth on device performance for non-diffusive flash-annealed 45nm SOI-MOSFETs

Source/drain-extension-last process for incorporating in situ doped lattice-mismatched extension stressor for enhanced performance in SOI N-FET

Characteristics and thermal stability of MOS devices with metal gate stacks of MoN and TiN

Characterization of coo bimetallic oxide nanoparticles as charge trapping nodes in nonvolatile memory devices

Investigation into key technologies of 12-bit DA converter

An empirical study of dynamic properties of an individual carbon nanotube electron source system

Metallic multiwalled carbon nanotubes for microwave applications

Digitally addressable vertically aligned carbon nanofibers for implementation of massively parallel maskless lithography

A bio-inspired image processor for edge detection with single-electron circuits

A semi empirical model of vertically aligned carbon nanofiber for field emission devices for circuit application

Strain-induced anisotropy of electromigration in copper interconnect

A simple hardware-based statistical model on 65nm SOI CMOS technology

Predictive technology modeling for 32nm low power design

Modeling the thermal behavior of chalcogenide based phase change memory cell

Sensitivity of static noise margins to random doping variations in 6T SRAM cells

Electrical and thermal transport in metallic single-wall carbon nanotubes

SiC avalanche photodiodes

Bulk GaN-Based Schottky rectifier and UV photodetector

Ultrathin MBE-Grown AlN/GaN HEMTs with record high current densities

Analysis of AlGaN/GaN HEMT modulated by photosystem I reaction centers

Influence of Shockley stacking fault propagation and contraction on electrical behavior of 4H-SiC pin diodes and DMOSFETs

Physical and Optical Characterization of GaN Doped with Neodymium grown by Plasma-Assisted Molecular Beam Epixaty

Advanced semiconductor on insulator substrates for LP and HP digital CMOS applications

Transport in ultra-thin-body SOI and silicon nanowire MOSFETs

Large current enhancement in n-MOSFETs with strained Si on insulator

Design and optimization of the SOI field effect diode (FED)

Material choice for optimum stress memorization in SOI CMOS processes

Electromechanical response of silicon nanowires: Bandgap and effective mass

Monte Carlo simulation of hot optical phonon decay in a carbon nanotube

A nonparabolicity model compared to tight-binding: The case of square silicon quantum wires

A fast semi-numerical technique for the solution of the poisson-boltzmann equation in a cylindrical nanowire

Enhancement of hole mobility due to confinement in small diameter [110] silicon nanowires

Modeling and analysis of intrinsic gate capacitance for carbon nanotube array based devices considering variation in screening effect and diameter

Closed-form physics-based models for threshold voltage and subthreshold slope in FinFETs including 3D effects

Physics-based modeling of output conductance in nanoscale bulk MOSFET by analytically solving 2D poisson

An analytical extraction method for scalable substrate resistance model in RF MOSFETs

Analytic diffusion and drift components of drain current for double gate MOSFETs

Temperature dependent empirical modeling of proximity diffused Si esaki diodes and memory circuits

Physics based current and capacitance modeling of short-channel double gate MOSFETs

Challenges and opportunities of emerging nanotechnology for VLSI nanoelectronics

The ultimate MOSFET and the limits of miniaturization

The coming revolution in RF electronics

0.18 μm double-recessed III-nitride metal-oxide double heterostructure field-effect transistors

Low-loss high-power AlInGaN RF switches

Gate I-V characteristics degradation in AlGaN/AlN/GaN HEMTs

Extraction of effective trap density and gate length in AlGaN/GaN HEMTs based on pulsed I-V characteristics

Current collapse and reliability mechanisms in GaN HEMTs

Monocrystalline SiGe for high-performance uncooled thermistor

Carrier-transport-enhanced CMOS using new channel materials and structures

Simplified Si resonant interband tunnel diodes

Anneal time study of Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy

Germanium profile, graduality and base doping level influences in the performance of SiGe HBT

NEMS switch with 30 nm thick beam and 20 nm high air gap for high density non-volatile memory applications

Toward smart micromachines with integrated feedback control

Applications of BioMEMS in Cell-Related Research

Amorphous SiC as a structural layer in microbridge-based RF MEMS switches for use in software-defined radio

Low frequency noise measurement of three-axis surface micro- machined silicon capacitive accelerometer

Ballisticity of the linear response transport in nanometric silicon devices

Efficient simulation of hole transport in strained Si and SiGe on insulator inversion layers

Two-Band k·p model for the conduction band in silicon: impact of Strain and confinement on band structure and mobility

Smart-power device model coupling compact, distributed and logic level description

Impact of source to drain tunneling on the I trade-off of alternative channel material MOSFETs

A 2D-non-parabolic six moments model

Technical challenges in commercial SiC power MOSFETs

Time dependence of bias-stress induced threshold-voltage instability measurements

Electrically detected magnetic resonance studies of processing variations in 4H SiC based MOSFETs

Atomic scale defects in 4H SiC/SiO using electron spin resonance

Characterization of the origin of band states in the SiC/SiO interface

High temperature high field numerical modeling and experimental characterization of 4H-SiC MOSFETs

Picosecond electrical soliton oscillators & THz electronics

Conduction-band spin splitting effects in staggered-bandgap structures

Plasma wave FET for sub-wavelength THz imaging

Selective doping and optimization of InGaN channel and InGaN backbarrier in deep submicron GaN heterojunction field effect transistor with a recessed gate

Tunable Optically pumped high power terahertz laser on cyclotron resonance in semiconductors

Silicon nanowire memory application using hafnium oxide charge storage layer

Performance analysis of multi-walled carbon nanotube based interconnects

Single charge detection using single-walled carbon nanotube single-hole transistor

Dynamic C-V and G-V characteristics of metal-insulator-semiconductor capacitor with Au nanocrystals and high-K tunneling layer

Impact of high-κ dielectric and metal nanoparticles in simultaneous enhancement of programming speed and retention time of nano-flash memory

Silicon nanowire fabrication using novel hydrogenation-assisted deep reactive ion etching

Achieving high mobilities in solution-processable organic FETs by minimizing contact effects

Bottom contact organic transistor based on air-stable n-type F15-NTCDI

Influence of the film microstructure on the electronic properties and flicker noise in organic thin film transistors

A novel gated transmission line method for organic thin film transistors

Metal molecule GaAs devices using redox-active organic self-assembled monolayers

Thin film microstructure of solution processable pyrene-based small molecules for electronic applications

Stress and morphology evolution during the heteroepitaxial growth of group III-nitrides

The influence of substrate atomic step morphology on threading dislocation distributions in iii-nitride films

Etch rates for Si-face 4H-SiC using H and a C partial pressure

H etching and epitaxial growth on 4H-SiC boule domes

Triangular shaped defects limiting reverse blocking performance of 4H Silicon Carbide high power junction barrier Schottky devices

Milliwatt THz ouptut power from a photoconductive switch

Plasma waves in graphene-based heterostructures and their terahertz device applications

80nm In Composite channel HEMT with an f of 280GHz

Impact of lateral engineering on the logic performance of sub-50 nm InGaAs HEMTs

Gallium nitride nanowire devices - fabrication, characterization, and transport properties

Epitaxially grown graphene field-effect transistors with electron mobility exceeding 1500 $cm^{2}/Vs$ and hole mobility exceeding 3400 $cm^{2}/Vs$

Top-gated field effect transistors fabricated using thermally-oxidized silicon nanowires synthesized by vapor-liquid solid growth

Transparent organic field-effect transistors with carbon nanotube electrodes

Light emitting diodes on glass and silicon substrates fabricated using novel low temperature hydrogenation-assisted nano-crystallization of silicon thin films

Fabrication and characterization of suspended carbon nanotubes

Carbon nanotubes for high performance flexible electronics

Organic and carbon-based electronics printed onto flexible substrates

The US display consortium program on flexible, printed, and organic electronics

Mechanically strained laser crystallized poly-silicon thin film transistors and ring oscillators fabricated on stainless steel foils

Improvement of the performance of strained 0.13 μm MOSFETs mounted on flexible plastic substrates

Non-equilibrium operation of arsenic diffused long-wavelength infrared HgCdTe photodiodes

A type-II near-infrared detector with very high stable gain and low noise at room temperature

Implementation and study of photovoltaic cells based on InP lattice-matched InGaAs and InGaAsP

Characterization of scaled MANOS nonvolatile semiconductor memory (NVSM) devices

Vertical AND (V-AND) array: High density, high speed, and reliable flash array

Ge/Si hetero-nanocrystal MOSFET memories

Gate-Controlled Photodetector in PIN technology for distance measurements

A high voltage PMOS transistor for quenching of geiger-mode avalanche photodiodes in deep submicron CMOS technologies

Properties of high-performance phototransistor photodetector (PTPD) in standard SiGe BiCMOS technology

Compact demultiplexers with narrow spectral width channels using alternating-defect coupled-cavity waveguides (AD-CCWs)

Simulating novel EM effects

Particle-In-cell simulation of resonant-cavity-enhanced extraordinary transmission through sub-wavelength plasmonic structure

Determination of the channel temperature in GaN MOSHFETs under microwave operational conditions

High-speed thermal measurements of high-power diode arrays

Characterization of latch-up in CMOS inverters in pulsed electromagnetic interference environments

Room-temperature bias acceleration test for data retention screening on SONOS nonvolatile memory devices

Magnifying superlens based on plasmonic metamaterials

Maximum intrinsic gain degradation in technology scaling

Smart-power device model coupling compact, distributed and logic level description

A carbon nanotube capacitor structure

Simultaneous two-color Infrared detectors based on MBE-grown HgCdTe heterostructures

Vertical silicon-on-nothing FET: Threshold voltage calculation using compact capacitance model

A non-linear TCAD large signal model to enhance the linearity of transistor

A novel low-trigger and high-holding voltage SCR without externally- assisted circuitry for area-efficient on-chip ESD protection

Characterization of complex-coupled multi-quantum well DFB laser diode with embedded absorptive Bragg grating layer

Y-coupled GaAs quantum cascade lasers

High-temperature CW mid-infrared interband cascade lasers

Characteristic temperature of a tunneling-injection quantum dot laser

Enhanced nonlinear susceptibility in strained quantum cascade lasers

Minor magnesium doping in P-type layer of InGaN/GaN MQW LED to enhance electrical and optical properties

In situ gas phase infrared absorption measurements during hafnium oxide atomic layer deposition

The semiconductor-dielectric interface from PN junction edge and the voltage dependence of leakage reverse current

PCA-based network modeling using standardized X-ray diffraction data for the electrical characteristics of the HfO thin films grown by MOMBE

Comprehensive study on dynamic bias temperature instability of p-channel polycrystalline silicon thin-film transistors

Characterization of the low temperature activated P+/N junction formed by implant into silicide method

Leakage effect suppression in charge pumping measurement and stress-induced traps in high-k Gated MOSFETs

2005 International Semiconductor Device Research Symposium

International Semiconductor Device Research Symposium, 2003

2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497)

Achieving high mobilities in solution-processable organic FETs by minimizing contact effects

Content Provider	IEEE Xplore Digital Library
Author	Hamadani, B.H. McCulloch, I. Heeney, M. Gundlach, D.J.
Copyright Year	2007
Description	Author affiliation: Nat. Inst. of Stand. & Technol., Gaithersburg (Hamadani, B.H.)
Abstract	Contact effects in OFETs often play an important role and care must be taken to distinguish contact-limited charge injection from bulk-limited charge transport. In this paper, we report on charge transport in organic field-effect transistors based on (2,5-bis(3- tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) as the active polymer layer with saturation field-effect mobilities as large as 1 $cm^{2}V^{-1}s^{-1}.$ The dependence of mobility on transistor channel length is investigated for devices with Au or Pt as the source and drain electrodes.
Starting Page	1
Ending Page	1
File Size	174441
Page Count	1
File Format	PDF
ISBN	9781424418916
DOI	10.1109/ISDRS.2007.4422498
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-12-12
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	OFETs Polymers Gold Contact resistance Organic materials Semiconductor materials Educational institutions NIST Chemical technology Organic chemicals
Content Type	Text
Resource Type	Article

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