NDLI: Source/drain-extension-last process for incorporating in situ doped lattice-mismatched extension stressor for enhanced performance in SOI N-FET

Content Provider	IEEE Xplore Digital Library
Author	Hoong-Shing Wong Kah-Wee Ang Lap Chan Keat-Mun Hoe Chih-Hang Tung Balasubramaniam, N. Weeks, D. Landin, T. Spear, J. Thomas, S.G. Samudra, G. Yee-Chia Yeo
Copyright Year	2007
Description	Author affiliation: Nat. Univ. of Singapore, Singapore (Hoong-Shing Wong; Kah-Wee Ang; Lap Chan)
Abstract	We report a new source/drain-extension-last (SDE-last) process flow to incorporate in situ doped and lattice-mismatched source/drain (S/D) stressors extremely close to the channel edge for increased strain and reduced series resistance. This process enables the introduction of S/D stressors with much larger than reported lattice-mismatch at the end of the front-end process, thereby minimizing the thermal budget experienced by highly strained heterostructures which could possibly relax strain. For the first demonstration of this concept, an in situ phosphorus- doped silicon-carbon (SiCP) SDE was employed and integrated in a SOI N-FET. A record-high substitutional carbon concentration of 2.1% was used to realize very significant strain effects.
Starting Page	1
Ending Page	2
File Size	342064
Page Count	2
File Format	PDF
ISBN	9781424418916
DOI	10.1109/ISDRS.2007.4422419
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-12-12
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Capacitive sensors Thermal stresses Educational institutions Microelectronics Etching Manufacturing Silicon carbide Transconductance Silicon alloys Backscatter
Content Type	Text
Resource Type	Article

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