NDLI: Electrically detected magnetic resonance studies of processing variations in 4H SiC based MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Cochrane, C.J. Lenahan, P.M. Lelis, A.J.
Copyright Year	2007
Description	Author affiliation: Pennsylvania State Univ., University Park (Cochrane, C.J.; Lenahan, P.M.)
Abstract	Our group identified defects in a limited subset of generally low performance 6H and 4H SiC MOSFETs with electrically detected magnetic resonance (EDMR) (M.S. Dautrich et al., 2006),(D.J. Meyer et al., 2005). That work demonstrated the potential of EDMR for studies of SiC MOSFETs and established that both interface dangling bonds and vacancy centers which extend into the SiC "bulk" can contribute to the widely reported performance limitations of these devices. (Another group studying porous SiC has utilized conventional electron spin resonance (ESR) to study SiC/Si02 interface trapping centers (J.L. Cantin et al., 2004)). In this study, we utilize improved sensitivity EDMR to compare performance limiting defects in a fairly wide variety of SiC MOSFETs prepared under much more technologically relevant processing conditions. Our study involves four sets of 4H SiC lateral MOSFETs with a gate thickness of 500 A. All of these devices received a standard dry-wet thermal gate oxide growth. In some devices, the oxide growth was followed by an NO anneal. Some devices had an "as-grown" epitaxial layer, others an implanted epitaxial layer.
Starting Page	1
Ending Page	2
File Size	190777
Page Count	2
File Format	PDF
ISBN	9781424418916
DOI	10.1109/ISDRS.2007.4422483
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-12-12
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Magnetic resonance Silicon carbide MOSFETs Annealing Paramagnetic resonance Voltage Educational institutions Epitaxial layers Magnetic fields Magnetic tunneling
Content Type	Text
Resource Type	Article

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