NDLI: Direct integration of single-walled carbon nanotubes with silicon

Content Provider	IEEE Xplore Digital Library
Author	Albrecht, P.M. Farrell, R.M. Ye, W. Lyding, J.W.
Copyright Year	2003
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA (Albrecht, P.M.; Farrell, R.M.)
Abstract	We have used ultrahigh vacuum scanning tunneling microscopy (UHV STM) to study single-walled carbon nanotubes (SWNTs) supported by a hydrogen-terminated Si(100)-2/spl times/1 surface. Two distinct methods were used in the deposition of SWNTs. The first is an ex situ solution-based scheme, while the second involves direct mechanical transfer in situ. The UHV-prepared Si(100)-2/spl times/1:H surface is highly robust to ambient exposure, resulting in minimal surface degradation associated with ex situ chemical processing. We have achieved simultaneous atomic resolution STM images of SWNTs and the nearby silicon substrate. Local electronic characterization was performed using scanning tunneling spectroscopy (STS). I-V spectra depict a shift in the Fermi energy of semiconducting SWNTs towards the valence band edge, consistent with charge transfer between the nanotube and the silicon substrate. A metallic SWNT shows an approximately linear I-V response at low bias, while the surrounding Si(100)-2/spl times/1:H substrate shows a /spl sim/1.3 eV gap. An advanced understanding of the fundamental physical and electronic interactions between carbon nanotubes and silicon will further the development of hybrid nanoscale devices and circuits.
Sponsorship	IEEE Nanotechnol. Council IEEE Region 6 Western USA
Starting Page	327
Ending Page	330
File Size	1008666
Page Count	4
File Format	PDF
ISBN	0780379764
DOI	10.1109/NANO.2003.1231784
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-08-12
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Carbon nanotubes Silicon Substrates Tunneling Microscopy Robustness Degradation Chemical processes Atomic layer deposition Energy resolution
Content Type	Text
Resource Type	Article

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